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onsemi Bipolar PNP Transistor, 100 mA, -65 V, 6-Pin SOT-363 Package NST65010MW6T1G

Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.1mm
Length 2.2mm
Model NST65010MW6T1G
Width 2.2mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-363
Pin Count 6
Maximum Collector Emitter Voltage Vceo -65V
Minimum DC Current Gain hFE 0.9
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 380mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor features isolated transistor configuration suitable for surface mount.
  • Maximum power dissipation is 380 mW, ensuring durability under moderate power load.
  • Gain (hFE) starts from 0.9, providing matched transistor performance.
  • Compact package with dimensions 2.2 mm length, 2.2 mm width, and 1.1 mm height.
  • Operates at frequencies up to 100 MHz, ideal for high-speed switching applications.
  • Maximum operating temperature up to 150°C for reliable use in various environments.
  • Meets Automotive Standard AEC-Q101 for quality and automotive-grade use.

Product Description

onsemi NST65010MW6T1G is a bipolar PNP transistor designed for surface mount applications with a compact 6-Pin SOT-363 package. It supports a maximum DC collector current of -100 mA and collector-emitter voltage of -65 V, suitable for low-power switching and amplification in electronic circuits.

This transistor features isolated transistor configuration, offering stable performance and ease of circuit integration. It dissipates a maximum power of 380 mW, allowing it to handle moderate power loads efficiently. With a current gain starting from 0.9 and transition frequency up to 100 MHz, it provides reliable operation in high-frequency switching applications.

The physical dimensions measure 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height, making it an excellent choice for compact PCB designs. The maximum operating temperature of 150°C ensures durability in demanding environmental conditions.

Conforming to the AEC-Q101 automotive standard, this transistor supports automotive and industrial applications requiring stringent quality standards. Its surface mount package simplifies assembly automation in manufacturing processes.

This transistor features isolated transistor configuration suitable for surface mount. Maximum power dissipation is 380 mW, ensuring durability under moderate power load. Gain (hFE) starts from 0.9, providing matched transistor performance.

Compact package with dimensions 2.2 mm length, 2.2 mm width, and 1.1 mm height. Operates at frequencies up to 100 MHz, ideal for high-speed switching applications. Maximum operating temperature up to 150°C for reliable use in various environments.

Meets Automotive Standard AEC-Q101 for quality and automotive-grade use.

This product is suitable for electronics manufacturing, automotive electronics, industrial control devices, and high-frequency amplifier circuits. Choose this transistor for dependable performance in compact applications.

Explore more Discrete Semiconductor components at EnvMart for your industrial and manufacturing needs.

onsemi Bipolar PNP Transistor, 100 mA, -65 V, 6-Pin SOT-363 Package NST65010MW6T1G
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for this model is -65 V.

This transistor has a maximum power dissipation of 380 mW.

The physical dimensions of this model are 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height.

The maximum DC collector current (Idc) for this transistor is -100 mA.

It operates at a maximum transition frequency of up to 100 MHz, suitable for high-speed applications.

The minimum DC current gain (hFE) starts from 0.9.

This model supports surface mounting, making it suitable for compact PCB designs.

The maximum operating temperature for this transistor is 150°C.

It conforms to the AEC-Q101 automotive standard, ensuring quality for automotive applications.

This transistor is housed in a 6-Pin SOT-363 package.

The maximum emitter-base voltage (VEBO) is -5 V.

It is suitable for low-power switching and amplification in electronic circuits, including automotive and industrial applications.

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