STMicroelectronics Type N-Channel Silicon Carbide (SiC) MOSFET, 45 A, 1200 V Enhancement Mode, 3-Pin Hip-247 SCT30N120

STMicroelectronics SCT30N120 is a high-performance Type N-Channel silicon carbide (SiC) MOSFET designed for demanding power switching and amplification tasks in industrial, automotive, and commercial environments. It features a robust 3-pin Hip-247 package optimized for through-hole mounting and enhanced thermal dissipation.

This MOSFET supports a maximum continuous drain current of 45 amperes and a maximum drain-source voltage of 1200 volts, making it well suited for high-voltage power conversion and management systems. The enhancement mode operation ensures superior switching capabilities, with a fast typical gate charge of 105 nanocoulombs, contributing to high efficiency and reduced power loss.

It has a maximum power dissipation capacity of 270 watts, enabling it to operate reliably even in demanding thermal conditions. The low on-resistance of 100 milliohms minimizes conduction losses, further improving system efficiency. Its standard forward voltage of 3.5 volts supports effective current control in high power circuits.

The product is rated for an extensive operating temperature range from -55°C to 200°C, ensuring reliability in harsh industrial conditions and automotive applications. With compact dimensions of 15.75 mm length, 5.15 mm width, and 20.15 mm height, it provides an excellent balance between power handling and space efficiency.

This MOSFET is ideal for applications in power electronics, motor drives, renewable energy systems, power supplies, and industrial automation. Its silicon carbide technology offers advantages over traditional silicon devices by enabling higher temperature operation, faster switching, and improved efficiency.

Type N enhancement mode channel ensuring effective MOSFET operation. Maximum continuous drain current of 45 amperes for robust performance. High voltage capability with 1200 volts drain-source voltage. 3-pin Hip-247 package for through-hole mounting compatibility.

Maximum power dissipation of 270 watts suitable for high power applications. Fast switching with typical gate charge of 105 nC at gate-source voltage. Wide operating temperature range from -55°C to 200°C for industrial and automotive environments.

Low maximum drain-source resistance of 100 milliohms reduces conduction losses. Standard forward voltage drop of 3.5 volts enhances efficiency. Compact dimensions: Length 15.75 mm, Width 5.15 mm, Height 20.15 mm optimize circuit board space.

Explore EnvMart’s extensive selection of semiconductor components for industrial, laboratory, automotive, HVAC, and manufacturing applications, including this STMicroelectronics SCT30N120 MOSFET.

Explore more products in our Power MOSFET category.