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Infineon OptiMOS 5 Type N-Channel MOSFET 60 V 45 A Enhancement Mode 3-Pin TO-252 IPD053N06NATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD053N06NATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | OptiMOS 5 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 45A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | 27nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Type N enhancement MOSFET suited for high-current switching applications.
- 45 A maximum continuous drain current supports robust power designs.
- Low 8 mΩ drain-source resistance reduces conduction losses.
- Typical gate charge of 27 nC enables rapid switching transitions.
- Capable of dissipating up to 83 W of power for high power operation.
- Wide operating temperature range from -55°C to 175°C ensures reliability.
- Compact 3-pin TO-252 package for surface mounting on PCBs.
- Maximum gate-source voltage tolerance of 20 V for flexible gate driving.
Product Description
Infineon IPD053N06NATMA1 OptiMOS 5 Type N-Channel MOSFET features a 60 V maximum drain-source voltage and supports a maximum continuous drain current of 45 A. This enhancement mode device is housed in a compact 3-pin TO-252 surface-mount package, ideal for high power-density applications.
It is designed for efficient high-current switching with a low Rds(on) of 8 mΩ, reducing conduction losses and improving system efficiency. The typical gate charge of 27 nC enables faster switching transitions, making it suitable for rapid switching power circuits.
The MOSFET operates reliably across a broad temperature range from -55°C to 175°C and tolerates up to 20 V gate-source voltage, accommodating modern gate drive schemes. It can dissipate up to 83 W of power, necessitating careful PCB layout with adequate thermal vias for heat management.
Applications include synchronous buck converters in power supplies, three-phase motor inverter half-bridges, battery management systems for high current pathways, DC-DC conversion in telecommunications, and industrial automation load switching.
Low conduction losses from 8 mΩ Rds(on) improve power efficiency. High continuous current rating of 45 A supports demanding power applications. Fast switching enabled by 27 nC typical gate charge. High power dissipation capability of 83 W allows robust operation.
Wide temperature range ensures reliability in harsh environments. Compact TO-252 package optimizes PCB space and thermal performance. 20 V gate voltage tolerance supports versatile gate driver designs. Typical forward voltage of 1.2 V for accurate conduction loss calculations.
Industrial applications span power electronics, motor drives, telecommunications, and automation systems. Proper thermal design including heatsinks and PCB copper planes is essential for maintaining junction temperature within operational limits for long-term reliability. The device requires PCB pad geometry and thermal vias optimized for effective heat dissipation.
Explore the Semiconductors category at EnvMart for a comprehensive range of power MOSFETs and related components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 45 A, making it suitable for high-current applications.
This MOSFET can handle a maximum drain-source voltage of 60 V.
The typical gate charge for this model is 27 nC, which facilitates rapid switching transitions.
The maximum drain-source resistance (Rds(on)) is 8 mΩ, which helps reduce conduction losses.
It is capable of dissipating up to 83 W of power, suitable for high power operation.
The operating temperature range for this MOSFET is from -55°C to 175°C, ensuring reliability in various environments.
This model comes in a compact 3-pin TO-252 surface-mount package, optimizing PCB space.
The maximum gate-source voltage tolerance is 20 V, allowing for flexible gate driving options.
The dimensions of this model are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height.
It is suitable for applications such as synchronous buck converters, three-phase motor inverters, and battery management systems.
The typical forward voltage for this device is 1.2 V, which is useful for conduction loss calculations.
This model is a Type N enhancement mode MOSFET, designed for efficient high-current switching.
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