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Texas Instruments NexFET Type N-Channel Power MOSFET 100A, 60V, Enhancement Mode, 8-Pin SON Package CSD18533Q5A
Specifications
| Country of Origin | India |
|---|---|
| Brand | Texas Instruments |
| Height | 1.1mm |
| Length | 5.8mm |
| Model | CSD18533Q5A |
| Width | 5mm |
| Mount Type | Surface |
| Series | NexFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 8.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.2W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.8V |
Key Features
- This MOSFET features an enhancement mode channel for improved switching performance.
- Maximum drain-source resistance is 8.5 milliohms ensuring low conduction losses.
- Typical gate charge is 14 nanocoulombs at rated gate-source voltage for efficient gate drive.
- Maximum power dissipation is 3.2 watts suitable for moderate power applications.
- Operating temperature ranges from -55°C to 150°C enabling reliability in harsh environments.
- Forward voltage drop of 0.8 volts minimizes power loss during conduction.
- Designed with an 8-pin Small Outline No-lead (SON) package for compact PCB footprints.
- Surface mount type facilitates automated assembly and space-saving designs.
Product Description
Texas Instruments CSD18533Q5A is an advanced NexFET Type N-Channel Power MOSFET designed for high efficiency and performance in electronic and power management circuits. It supports a maximum continuous drain current of 100 amperes and a maximum drain-source voltage of 60 volts, making it suitable for a wide range of industrial and commercial applications including power supplies, motor controls, and power conversion systems.
The device operates in enhancement mode and is packaged in a compact 8-pin SON surface mount format, optimizing PCB space and thermal performance. It features a low maximum drain-source resistance of 8.5 milliohms, reducing conduction losses and improving overall circuit efficiency.
The typical gate charge of 14 nanocoulombs at the specified gate-source voltage ensures fast switching and low gate drive power. The MOSFET is rated for maximum power dissipation of 3.2 watts and can operate reliably across a broad temperature range from -55°C to 150°C, providing robust performance under demanding environmental conditions. Its forward voltage drop is low at 0.8 volts, ensuring minimal voltage loss during operation.
This MOSFET is suitable for use in industrial, laboratory, and commercial electronic equipment, including power management modules and energy-efficient motor drives. The surface mount SON package supports automated manufacturing processes, facilitating high-volume production efficiency.
This MOSFET features an enhancement mode channel for improved switching performance. Maximum drain-source resistance is 8.5 milliohms ensuring low conduction losses. Typical gate charge is 14 nanocoulombs at rated gate-source voltage for efficient gate drive.
Maximum power dissipation is 3.2 watts suitable for moderate power applications. Operating temperature ranges from -55°C to 150°C enabling reliability in harsh environments. Forward voltage drop of 0.8 volts minimizes power loss during conduction.
Designed with an 8-pin Small Outline No-lead (SON) package for compact PCB footprints. Surface mount type facilitates automated assembly and space-saving designs. Explore more Texas Instruments MOSFET products and components for enhanced performance and design flexibility at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 100 amperes.
It supports a maximum drain-source voltage of 60 volts.
The typical gate charge is 14 nanocoulombs.
The maximum power dissipation is rated at 3.2 watts.
The dimensions are 5.8 mm in length, 5 mm in width, and 1.1 mm in height.
The maximum drain-source resistance is 8.5 milliohms.
It operates within a temperature range of -55°C to 150°C.
This MOSFET is designed for surface mount installation.
The forward voltage drop is 0.8 volts, which minimizes power loss during operation.
It features an enhancement mode channel, which improves switching performance.
The maximum gate-source voltage is 20 volts.
The country of origin for this model is India.
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