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Infineon SIPMOS Type P-Channel MOSFET, 9.7 A, 60 V Enhancement Mode, 3-Pin TO-252 Package SPD09P06PLGBTMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 2.41mm
Length 6.73mm
Model SPD09P06PLGBTMA1
Width 6.22mm
Mount Type Surface
Series SIPMOS
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 9.7A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 400mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 42W
Typical Gate Charge Qg @ Vgs 14nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf -1.1V

Key Features

  • Enhancement mode MOSFET designed for high efficiency and reliability.
  • Surface mountable TO-252 package with compact dimensions.
  • Maximum power dissipation of 42 W suitable for power applications.
  • Wide operating temperature range from -55°C to 175°C.
  • Lowest maximum drain-source resistance of 400 mΩ ensures better conductivity.
  • Typical gate charge of 14 nC allowing fast switching.
  • Complies with automotive industry standard AEC-Q101.
  • Pb-free lead plating and RoHS compliant for environmental safety.

Product Description

Infineon SPD09P06PLGBTMA1 SIPMOS Type P-Channel MOSFET is a robust surface-mount transistor in a TO-252 package, delivering a maximum continuous drain current of 9.7 A and a maximum drain-source voltage of 60 V. This enhancement mode device features low on-resistance and supports high power dissipation up to 42 W, making it ideal for demanding electronic circuits.

The compact dimensions of 6.73 mm length, 6.22 mm width, and 2.41 mm height allow efficient board space usage in industrial and automotive electronics. The transistor operates over a wide temperature range from -55°C to 175°C, providing stable performance under harsh conditions.

With a maximum gate-source voltage rating of 20 V and a typical gate charge of 14 nC, this MOSFET enables rapid switching and reduced switching losses, essential for high-frequency applications.

Designed for applications in telecommunications, eMobility, notebooks, and DC/DC converters, this Infineon SIPMOS P-Channel device is also AEC-Q101 qualified, ensuring reliability and compliance with automotive industry standards. Additionally, it is Pb-free and RoHS compliant, supporting environmentally friendly manufacturing processes.

Enhancement mode operation for controlled switching. Maximum continuous drain current of 9.7 A supports moderate power loads. Maximum drain-source voltage of 60 V ensures safe operation in low voltage circuits. Surface mount TO-252 package optimizes PCB footprint.

Automotive-grade quality with AEC-Q101 certification. Wide operating temperature range from -55°C to 175°C. Low maximum drain-source resistance of 400 mΩ minimizes power dissipation. Typical gate charge of 14 nC facilitates efficient switching.

Lead-free finish and RoHS compliance guarantee environmental safety.

This MOSFET is a reliable choice for industrial, automotive, telecommunications, and power management applications requiring high efficiency and durability. Explore more in the EnvMart MOSFET category for related products and solutions.

Infineon SIPMOS Type P-Channel MOSFET, 9.7 A, 60 V Enhancement Mode, 3-Pin TO-252 Package SPD09P06PLGBTMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 9.7 A.

This MOSFET has a maximum drain-source voltage rating of 60 V.

The typical gate charge for this model is 14 nC.

The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height.

The maximum power dissipation for this model is 42 W.

It operates over a wide temperature range from -55°C to 175°C.

The maximum gate-source voltage rating for this MOSFET is 20 V.

This model supports surface mounting.

It complies with the automotive industry standard AEC-Q101.

The maximum drain-source resistance is 400 mΩ.

This MOSFET is designed for applications in telecommunications, eMobility, notebooks, and DC/DC converters.

Yes, it is Pb-free and RoHS compliant, supporting environmentally friendly manufacturing processes.

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