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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | SPD09P06PLGBTMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 9.7A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 400mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 42W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.1V |
Infineon SPD09P06PLGBTMA1 SIPMOS Type P-Channel MOSFET is a robust surface-mount transistor in a TO-252 package, delivering a maximum continuous drain current of 9.7 A and a maximum drain-source voltage of 60 V. This enhancement mode device features low on-resistance and supports high power dissipation up to 42 W, making it ideal for demanding electronic circuits.
The compact dimensions of 6.73 mm length, 6.22 mm width, and 2.41 mm height allow efficient board space usage in industrial and automotive electronics. The transistor operates over a wide temperature range from -55°C to 175°C, providing stable performance under harsh conditions.
With a maximum gate-source voltage rating of 20 V and a typical gate charge of 14 nC, this MOSFET enables rapid switching and reduced switching losses, essential for high-frequency applications.
Designed for applications in telecommunications, eMobility, notebooks, and DC/DC converters, this Infineon SIPMOS P-Channel device is also AEC-Q101 qualified, ensuring reliability and compliance with automotive industry standards. Additionally, it is Pb-free and RoHS compliant, supporting environmentally friendly manufacturing processes.
Enhancement mode operation for controlled switching. Maximum continuous drain current of 9.7 A supports moderate power loads. Maximum drain-source voltage of 60 V ensures safe operation in low voltage circuits. Surface mount TO-252 package optimizes PCB footprint.
Automotive-grade quality with AEC-Q101 certification. Wide operating temperature range from -55°C to 175°C. Low maximum drain-source resistance of 400 mΩ minimizes power dissipation. Typical gate charge of 14 nC facilitates efficient switching.
Lead-free finish and RoHS compliance guarantee environmental safety.
This MOSFET is a reliable choice for industrial, automotive, telecommunications, and power management applications requiring high efficiency and durability. Explore more in the EnvMart MOSFET category for related products and solutions.
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