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DiodesZetex N-Channel MOSFET 500 mA, 50 V Enhancement, Surface Mount SOT-23, 3-Pin BSN20-7

Category Power MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1mm
Length 3mm
Model BSN20-7
Width 1.4mm
Mount Type Surface
Series BSN20
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type N
Maximum Continuous Drain Current Id 500mA
Maximum Drain Source Voltage Vds 50V
Maximum Drain Source Resistance Rds 2Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 920mW
Typical Gate Charge Qg @ Vgs 0.8nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf -1.2V

Key Features

  • This MOSFET offers a maximum continuous drain current of 500 mA.
  • It supports a maximum drain-source voltage of 50 volts, suitable for low power applications.
  • The device features a low drain-source resistance of 2 ohms for efficient switching.
  • Maximum power dissipation is rated at 920 mW, allowing stable operation.
  • Designed to operate within a temperature range from -55°C to 150°C ensuring reliability.
  • The typical gate charge is 0.8 nC at Vgs, enabling fast switching speed.
  • The MOSFET adheres to the automotive standard AEC-Q101 for enhanced durability.

Product Description

DiodesZetex BSN20-7 is an N-channel MOSFET transistor designed for low voltage switching applications where compact and reliable components are required. It features a surface mount 3-pin SOT-23 package enabling easy integration on PCB assemblies in industrial, automotive, and consumer electronics.

This device supports a maximum continuous drain current of 500 mA and a maximum drain-source voltage of 50 V, making it ideal for power management circuits operating under moderate load currents.

Featuring a maximum drain-source resistance of 2 Ω and a maximum power dissipation of 920 mW, the BSN20-7 provides effective efficiency and thermal performance. Its channel mode is enhancement type, offering predictable on/off switching characteristics.

The MOSFET supports a wide operating temperature range from -55°C to 150°C, suitable for harsh environmental conditions. The typical gate charge of 0.8 nC at Vgs enables fast switching and low gate drive power consumption.

Its dimensions (3 mm length, 1.4 mm width, 1 mm height) and surface mount design allow compact PCB layouts, essential for cost-effective manufacturing.

The product meets the automotive grade standard AEC-Q101, assuring quality and reliability for automotive and industrial applications such as power regulation, load switching, and electronic control modules.

This MOSFET offers a maximum continuous drain current of 500 mA. It supports a maximum drain-source voltage of 50 volts, ideal for low power circuits. Low Rds(on) value of 2 ohms ensures reduced conduction losses. Maximum power dissipation of 920 mW supports stable operation.

Wide temperature range operation from -55°C to 150°C. Compact SOT-23 package with 3 pins for surface mount technology. Typical gate charge of 0.8 nC facilitates efficient switching. Compliance with AEC-Q101 automotive standard guarantees durability.

DiodesZetex BSN20-7 is suitable for applications in electronics manufacturing, automotive control systems, industrial power management, and other environments requiring reliable MOSFET components. For more quality semiconductor components, browse collections in the Semiconductor category at EnvMart.

Explore more products in our Power MOSFET category.

DiodesZetex N-Channel MOSFET 500 mA, 50 V Enhancement, Surface Mount SOT-23, 3-Pin BSN20-7
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Frequently Asked Questions

The BSN20-7 supports a maximum continuous drain current of 500 mA.

This model can handle a maximum drain-source voltage of 50 V.

The maximum power dissipation for this MOSFET is rated at 920 mW.

The BSN20-7 is packaged in a surface mount SOT-23 configuration with 3 pins.

The typical gate charge at Vgs is 0.8 nC, facilitating efficient switching.

It operates within a temperature range from -55°C to 150°C.

The maximum drain-source resistance (Rds) is 2 ohms, ensuring reduced conduction losses.

Yes, it adheres to the automotive standard AEC-Q101, ensuring reliability for automotive applications.

The dimensions of this MOSFET are 3 mm in length, 1.4 mm in width, and 1 mm in height.

This MOSFET features an enhancement type channel, providing predictable on/off switching characteristics.

The maximum gate-source voltage (Vgs) for the BSN20-7 is 20 V.

It is suitable for applications in power management circuits, load switching, and electronic control modules in automotive and industrial settings.

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