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Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 2.3A, 30V Enhancement, 6-Pin TSOP SI3993CDV-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1mm |
| Length | 3.1mm |
| Model | SI3993CDV-T1-GE3 |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TSOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 188mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.4W |
| Typical Gate Charge Qg @ Vgs | 5.2nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Transistor Configuration | Isolated |
Key Features
- P-channel enhancement mode supports simple and efficient high-side switching.
- Maximum continuous drain current capability of 2.3A enables moderate load handling.
- Low drain-source resistance of 188 milliohms reduces conduction losses in circuits.
- Typical gate charge of 5.2 nanocoulombs allows fast switching response.
- Maximum power dissipation rating of 1.4 watts supports thermal management in small PCBs.
- Wide operating temperature range from -55°C to 150°C for reliability in harsh environments.
- Six-pin TSOP package provides compact board placement for modern electronic designs.
- Isolated transistor configuration suitable for load management and battery powered applications.
Product Description
Vishay SI3993CDV-T1-GE3 Isolated TrenchFET 2 Type P-Channel Power MOSFET is a surface-mount device designed for switching and load-management roles in compact electronic assemblies. With a continuous drain current rating of 2.3A and a maximum drain-source voltage of 30V, this device is suitable for moderate power applications.
The device features a low on-resistance of 188mΩ, which reduces conduction losses, and a typical gate charge of 5.2nC enabling fast and efficient gate control. The enhancement mode P-channel transistor allows for simple high-side switching implementations.
This MOSFET comes in a 6-pin TSOP package, providing a small footprint ideal for dense circuit designs and surface mounting. It operates reliably across a wide temperature range from -55°C to 150°C, ensuring performance stability in harsh or variable environmental conditions.
It integrates two transistor elements within the chip and offers an isolated transistor configuration, enhancing device applicability in battery-powered circuits, power management modules, and level-shifted gate control setups. The device tolerates up to ±20V gate-source voltage, requiring gate-drive circuitry to maintain Vgs within safe limits.
P-channel enhancement mode transistor for high-side switching. Peak continuous drain current of 2.3A for moderate load applications. Low Rds(on) at 188mΩ minimizes conduction losses. Fast gate transitions with typical gate charge of 5.2nC.
Power dissipation up to 1.4W supports thermal efficiency. 6-pin TSOP surface-mount package for compact PCB designs. Operating temperature range from -55°C to 150°C ensures durability. Ideal for battery-powered circuits, DC load disconnect, and reverse-current blocking.
Suitable for power-management modules in consumer electronics.
This power MOSFET is engineered to meet the requirements of industrial, consumer electronics, and other applications where space, power efficiency, and thermal management are critical. It is a component choice for engineers designing energy-efficient load switching and load management systems.
Explore more components like this in the Power MOSFET category at EnvMart for industrial semiconductor solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.3A, making it suitable for moderate load applications.
This MOSFET has a maximum drain-source voltage rating of 30V, allowing it to handle moderate power applications effectively.
The typical gate charge for this model is 5.2 nanocoulombs, which enables fast switching response.
The device features a low on-resistance of 188 milliohms, which helps reduce conduction losses in circuits.
It operates reliably across a wide temperature range from -55°C to 150°C, ensuring performance stability in harsh environments.
This model comes in a 6-pin TSOP package, which provides a compact footprint ideal for dense circuit designs.
The maximum power dissipation rating for this device is 1.4 watts, supporting thermal management in small PCBs.
This device is a P-channel enhancement mode transistor, suitable for high-side switching applications.
The MOSFET integrates two transistor elements within the chip, enhancing its applicability in various circuits.
It can tolerate up to ±20V gate-source voltage, requiring appropriate gate-drive circuitry for safe operation.
This model is suitable for battery-powered circuits, power management modules, and load management applications.
The dimensions of this model are height: 1mm, length: 3.1mm, and width: 1.7mm, making it compact for surface mounting.
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