onsemi NPN Bipolar Transistor SOT-23 25V 4mA 225mW 3-Pin MMBTH10LT1G

onsemi MMBTH10LT1G is an NPN bipolar transistor designed for low power switching and amplification in electronic circuits. It features a 3-pin SOT-23 surface mount package that facilitates compact assembly on PCBs, making it suitable for industrial, consumer electronics, communication, and signal processing applications.

The transistor supports a maximum DC collector current of 4 mA and a maximum collector-emitter voltage of 25 V, enabling moderate voltage operation. Its maximum power dissipation of 225 mW ensures stable functionality during operations requiring low power handling.

With a minimum DC current gain (hFE) of 50 and a transition frequency (ft) up to 100 MHz, this device is well suited for amplification purposes and high-frequency signal switching. It operates reliably across a wide temperature range from -55°C to 150°C, making it adaptable for varying industrial and laboratory environments.

The physical dimensions are optimized for space-restricted applications: length of 3 mm, width of 1.4 mm, and height of 1.1 mm. The single transistor configuration and NPN polarity align with a variety of standard circuit designs in both prototype and production electronic equipment.

Maximum DC collector current: 4 mA. Maximum collector-emitter voltage: 25 V. Package type: SOT-23 surface mount with 3 pins. Maximum power dissipation: 225 mW. Minimum DC current gain (hFE): 50. Maximum emitter base voltage: 3 V.

Transition frequency: 100 MHz. Operating temperature range: -55°C to 150°C. Dimensions: 3 x 1.4 x 1.1 mm. This transistor is commonly used in industrial electronics, communication equipment, power management circuits, and various high-frequency low-power electronic applications.

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