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onsemi PNP Transistor 6 A, 60 V, 4-Pin SOT-223 Surface Mount NSV60600MZ4T1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.75mm |
| Length | 6.7mm |
| Model | NSV60600MZ4T1G |
| Width | 3.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | -60V |
| Minimum DC Current Gain hFE | 70 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -6V |
| Maximum Collector Base Voltage VCBO | 100V dc |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 800mW |
| Maximum DC Collector Current Idc | -6A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
| STMicroelectronics STN9360 Transistor, -500 mA PNP, -600 V, 3-Pin SOT-223Brand | STMicroelectronics |
Key Features
- Rated for maximum power dissipation of 800 mW.
- Minimum DC current gain (hFE) of 70 ensures reliable amplification.
- Designed for surface mount applications with SOT-223 package type.
- Wide operating temperature range from -65°C to 150°C supports various industrial environments.
- Automotive grade following AEC-Q101 standard for enhanced quality and reliability.
- Maximum transition frequency up to 1 MHz.
Product Description
onsemi NSV60600MZ4T1G is a high-performance, general-purpose PNP bipolar transistor designed for industrial and automotive applications. It features a maximum DC collector current of -6 A and a maximum collector emitter voltage of -60 V in a compact 4-pin SOT-223 surface mount package. The transistor configuration is single type with a transistor polarity of PNP. Its design meets the AEC-Q101 automotive standard ensuring excellent quality and robustness in harsh environments.
With a maximum power dissipation of 800 mW and a minimum DC current gain (hFE) of 70, this transistor delivers reliable amplification and switching performance. The device operates efficiently across a wide temperature range from -65°C to 150°C, making it suitable for demanding industrial, automotive, and electronic circuit applications.
The transistor has a maximum collector base voltage (VCBO) of 100 V dc and a maximum emitter base voltage (VEBO) of -6 V, supporting safe operation under various conditions. Its maximum transition frequency of 1 MHz makes it suitable for moderate frequency applications. The SOT-223 package allows easy surface mount integration, saving PCB space.
Applications include automotive electronics, power management, signal switching, and amplification in electronic circuits used in HVAC, manufacturing, instrumentation, and control systems. The transistor’s compact dimensions (6.7 mm length, 3.7 mm width, 1.75 mm height) enable its use in space-constrained designs.
Rated max DC collector current: 6 A. Max collector emitter voltage: 60 V. Power dissipation: 800 mW. Automotive AEC-Q101 standard compliant. Wide temperature range operation. Explore more Bipolar Transistors and semiconductor components on EnvMart for various industrial and automotive applications.
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Frequently Asked Questions
The maximum collector emitter voltage (Vceo) for this model is -60 V.
The minimum DC current gain (hFE) is 70, ensuring reliable amplification performance.
The maximum power dissipation rating for this transistor is 800 mW.
It operates efficiently across a wide temperature range from -65°C to 150°C.
This model comes in a SOT-223 package type, designed for surface mount applications.
The maximum DC collector current (Idc) for this transistor is -6 A.
It complies with the AEC-Q101 automotive standard, ensuring quality and reliability in automotive applications.
The maximum transition frequency for this model is up to 1 MHz, making it suitable for moderate frequency applications.
The dimensions of this model are 6.7 mm in length, 3.7 mm in width, and 1.75 mm in height.
The maximum collector base voltage (VCBO) is 100 V dc.
This transistor is suitable for automotive electronics, power management, signal switching, and amplification in various electronic circuits.
The NSV60600MZ4T1G has a single transistor configuration with PNP polarity.
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