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STMicroelectronics MDmesh SuperMESH Type N-Channel MOSFET 15 A 400 V Enhancement 3-Pin TO-220 STP17NK40ZFP
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STP17NK40ZFP |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 15A |
| Maximum Drain Source Voltage Vds | 400V |
| Maximum Drain Source Resistance Rds | 250mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 35W |
| Typical Gate Charge Qg @ Vgs | 65nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.6V |
Key Features
- Features enhancement mode channel for improved control.
- Packaged in 3-pin TO-220 for easy through-hole mounting.
- Maximum power dissipation of 35 W ensures robust operation.
- Low maximum drain-source resistance of 250mΩ reduces power losses.
- Wide operating temperatures from -55°C to 150°C support diverse environments.
- Typical gate charge of 65nC enables efficient switching.
- Maximum gate-source voltage of 30V provides operation margin.
- Compact device dimensions facilitate space-saving designs.
Product Description
STMicroelectronics STP17NK40ZFP is a MDmesh SuperMESH Type N-Channel MOSFET designed for high efficiency power switching with a maximum continuous drain current of 15 A and a maximum drain-source voltage of 400 V. Packaged in a 3-pin TO-220 format, it is suitable for through-hole mounting in various electronic and industrial applications.
This device operates in enhancement mode providing excellent control and performance while dissipating up to 35 W of power. Its low drain-source resistance of 250mΩ reduces conduction losses, improving overall system efficiency. The MOSFET supports a wide temperature range from -55°C to 150°C, making it reliable in harsh and varying environments.
The typical gate charge of 65nC facilitates quick switching, which is critical in power electronics. The maximum gate-source voltage is 30 V, allowing a broad control voltage range. Although it does not conform to automotive standards, this MOSFET is ideal for industrial, laboratory, manufacturing, and commercial electronic power control uses.
Features enhancement mode channel for improved control. Packaged in 3-pin TO-220 for easy through-hole mounting. Maximum power dissipation of 35 W ensures robust operation. Low maximum drain-source resistance of 250mΩ reduces power losses.
Wide operating temperatures from -55°C to 150°C support diverse environments. Typical gate charge of 65nC enables efficient switching. Maximum gate-source voltage of 30V provides operation margin. Compact device dimensions facilitate space-saving designs.
No automotive or special standards, suitable for general industrial use. Designed for power switching applications in industrial and electronic equipment.
STMicroelectronics products are engineered for reliability and designed for use in a broad range of electrical and electronic circuits. This MOSFET is a fitting choice for power amplification, switching regulators, and motor control circuits. Explore our extensive catalog of semiconductors and MOSFETs to find components meeting your technical requirements for various industrial and electronic designs.
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Frequently Asked Questions
The maximum continuous drain current of the STP17NK40ZFP is 15 A.
This MOSFET has a maximum drain-source voltage of 400 V.
It is packaged in a 3-pin TO-220 format for through-hole mounting.
The typical gate charge is 65 nC, which facilitates efficient switching.
The maximum power dissipation is 35 W, ensuring robust operation.
This MOSFET operates within a temperature range of -55°C to 150°C.
The maximum gate-source voltage is 30 V, providing a broad control voltage range.
The maximum drain-source resistance is 250 mΩ, which helps reduce power losses.
It uses an enhancement mode channel for improved control and performance.
The dimensions are 16.4 mm in height, 10.4 mm in length, and 4.6 mm in width.
It is suitable for industrial, laboratory, manufacturing, and commercial electronic power control applications.
The country of origin for this MOSFET is India.
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