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STMicroelectronics MDmesh Type N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-220 STP20NM60FP
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.3mm |
| Length | 10.4mm |
| Model | STP20NM60FP |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 290mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 39nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.5V |
Key Features
- Features a maximum continuous drain current of 20 A for robust performance.
- Maximum drain-source voltage rating of 600 V ensures high voltage tolerance.
- Utilizes MDmesh technology for low on-resistance and enhanced efficiency.
- Package type is TO-220, suitable for through-hole mounting.
- Offers a maximum power dissipation of 45 W for handling moderate loads.
- Maximum drain-source resistance is 290 milliohm to reduce power loss.
- Gate charge is 39 nanocoulombs at Vgs, aiding fast switching.
- Operates within a temperature range from -65°C to +150°C for versatile deployment.
Product Description
STMicroelectronics STP20NM60FP is a MDmesh™ type N-Channel MOSFET transistor optimized for high voltage and current applications, rated for 20 A continuous drain current and 600 V maximum drain-source voltage.
This enhancement mode MOSFET in a 3-Pin TO-220 package provides an effective solution for power switching in electronic circuits, power supplies, and motor control systems. With a low maximum on-resistance of 290 milliohms and a typical gate charge of 39 nanocoulombs, it ensures efficient switching, minimizing power loss and heat generation.
It supports a wide operating temperature range from -65°C to 150°C, making it suitable for industrial, consumer electronics, and automotive applications not requiring automotive certification.
The device's compact size allows easy integration into various PCB layouts, and the through-hole mount facilitates reliable mechanical and electrical connections. Maximum continuous drain current of 20 A ensures robust power handling capability.
600 V maximum drain-source voltage withstands high voltage conditions. TO-220 package with 3 pins for standard mounting and connectivity. Peak power dissipation rating at 45 W supports moderate power applications. Low drain-source resistance reduces conduction losses significantly.
Wide temperature range from -65°C to 150°C for operating reliability. Designed with enhancement mode for precise MOSFET switching control. 30 V maximum gate-source voltage protects gate oxide integrity. Compact device dimensions for versatile PCB design.
This component is ideal for use in electronic component manufacturing, power management circuits, and semiconductor assemblies requiring reliable, high-performance MOSFET devices. Explore more semiconductor components and MOSFETs at EnvMart for industrial-grade electronic and electrical applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20 A, ensuring robust power handling capability.
This MOSFET has a maximum drain-source voltage rating of 600 V, which ensures high voltage tolerance in applications.
The package type of this model is TO-220, which is suitable for through-hole mounting.
It offers a maximum power dissipation of 45 W, making it suitable for handling moderate loads.
The maximum drain-source resistance for this MOSFET is 290 milliohms, which helps reduce power loss during operation.
The typical gate charge at Vgs is 39 nanocoulombs, aiding in fast switching performance.
This unit operates within a temperature range from -65°C to 150°C, allowing for versatile deployment in various environments.
This model features a 3-pin configuration, facilitating standard connectivity for mounting.
It is a Type N-channel MOSFET, optimized for high voltage and current applications.
The maximum gate-source voltage is 30 V, which protects the gate oxide integrity during operation.
This component is suitable for power switching in electronic circuits, power supplies, and motor control systems.
The dimensions of this model are 9.3 mm in height, 4.6 mm in width, and 10.4 mm in length.
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