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STMicroelectronics Type N-Channel MOSFET 72A 600V Enhancement Mode 3-Pin TO-247 STWA75N60M6

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STMicroelectronics Type N-Channel MOSFET 72A 600V Enhancement Mode 3-Pin TO-247 STWA75N60M6

Name: STMicroelectronics Type N-Channel MOSFET 72A 600V Enhancement Mode 3-Pin TO-247 STWA75N60M6
Brand: STMicroelectronics
SKU: 104530
Price: 17.21 USD
Availability: InStock

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Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin	China
Brand	STMicroelectronics
Height	21.1mm
Length	15.9mm
Model	STWA75N60M6
Width	5.1mm
Mount Type	Through Hole
Maximum Operating Temperature	150°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type N
Maximum Continuous Drain Current Id	72A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	36mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	446W
Typical Gate Charge Qg @ Vgs	106nC
Maximum Gate Source Voltage Vgs	25V

Key Features

This MOSFET utilizes advanced MDmesh™ M6 technology for low RDS(on) and efficient switching.
It features an enhancement channel mode with a maximum drain-source resistance of 36mΩ.
Designed for through-hole mounting with a 3-pin configuration and compact TO-247 package.
Maximum power dissipation is 446 W supporting robust operational loads.
Operates safely between -55°C and 150°C for a wide temperature range.
Maximum gate-source voltage is ±25 V with a typical gate charge of 106 nC.
Manufactured in China and optimized for industrial, electronic, and power electronics applications.

Product Description

STMicroelectronics STWA75N60M6 is a high-performance Type N-Channel MOSFET designed for power switching applications. With a maximum continuous drain current of 72 A and a drain-source voltage rating of 600 V, this device is suitable for industrial, automotive (non-standard), and commercial electronic circuits requiring efficient switching and low conduction losses. The 3-pin TO-247 package ensures reliable through-hole mounting and simplified thermal management.

This MOSFET features the latest MDmesh™ M6 technology that enhances the RDS(on) characteristics significantly, resulting in reduced switching losses and improved overall efficiency. Its user-friendly design includes zener protection and low gate input resistance, ensuring high reliability and ease of drive in high-frequency switching applications.

The device supports a wide operating temperature range from -55°C to 150°C and can dissipate up to 446 W power, making it robust under varying environmental conditions. The maximum gate-source voltage rating of 25 V and typical gate charge of 106 nC allows precise control with standard gate drivers.

Physical dimensions of length 15.9 mm, height 21.1 mm, and width 5.1 mm facilitate integration into standard power modules and printed circuit boards requiring space-efficient components.

Manufactured in China, this MOSFET meets industrial-grade quality and is ideal for use in power converters, motor drives, power supplies, and other discrete semiconductor applications.

This MOSFET utilizes advanced MDmesh™ M6 technology for low RDS(on) and efficient switching. It features an enhancement channel mode with a maximum drain-source resistance of 36mΩ. Designed for through-hole mounting with a 3-pin configuration and compact TO-247 package.

Maximum power dissipation is 446 W supporting robust operational loads. Operates safely between -55°C and 150°C for a wide temperature range. Maximum gate-source voltage is ±25 V with a typical gate charge of 106 nC. Dimensions are 15.9mm length, 21.1mm height, and 5.1mm width for precise PCB layouts.

Manufactured in China and optimized for industrial, electronic, and power electronics applications. Explore the Semiconductor category on EnvMart for high-quality discrete and integrated semiconductor components suitable for all your electronic design needs.