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DiodesZetex Silicon Junction Switching Diode, Single, 1 A Forward Current, 200 V SMB Package MURS120-13-F

Category Discrete Semiconductor Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 2.3mm
Length 4.57mm
Model MURS120-13-F
Width 3.94mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type SMB
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 40A
Maximum Forward Voltage Vf 875mV
Peak Reverse Recovery Time trr 25ns
Maximum Forward Current If 1A
Maximum Peak Reverse Repetitive Voltage Vrrm 200V

Key Features

  • Maximum forward current of 1 ampere ensures reliable operation.
  • Peak reverse recovery time of 25 nanoseconds supports fast switching applications.
  • 2-pin SMB package designed for surface mount mounting.
  • Wide operating temperature range from -55°C to 175°C for robust performance.
  • Maximum forward voltage of 875 millivolts optimized for efficiency.
  • Peak non-repetitive forward surge current rating of 40 amperes.
  • Compact dimensions with length of 4.57 mm, width of 3.94 mm, and height of 2.3 mm.
  • Designed for use in electronic, power, and switching diode applications.

Product Description

DiodesZetex MURS120-13-F is a silicon junction switching diode characterized by its single diode configuration and a maximum forward current of 1 A. It is packaged in a compact SMB surface mount package delivering reliable performance in power and electronic component applications.

The diode operates efficiently within a wide temperature range from -55°C to 175°C, making it suitable for demanding industrial and electronic environments. Its fast switching capability is supported by a peak reverse recovery time of 25 nanoseconds, enhancing performance in high-speed circuits.

This 2-pin diode features a maximum peak reverse repetitive voltage of 200 V and a maximum forward voltage of 875 mV, balancing power efficiency and operational stability. The device can withstand a peak non-repetitive forward surge current of 40 A, ensuring robustness during transient surge conditions.

Dimensionally, the diode measures 4.57 mm in length, 3.94 mm in width, and 2.3 mm in height, allowing easy integration on surface-mounted electronics boards. These technical specifications make it ideal for applications ranging from power supplies, rectification circuits, to other switching diode uses in industrial, electronic equipment, and automotive systems.

Maximum forward current of 1 A ensures operational reliability in switching circuits. Peak reverse recovery time of 25 ns supports efficient high-speed switching. Compact SMB package facilitates surface mounting on PCBs.

Wide operating temperature range enhances device durability across environments. Low forward voltage drop at 875 mV improves efficiency. High surge current capability for resilience against transient events. Small package dimensions aid in space-saving PCB design.

Ideal for industrial, electronic, power, and automotive component applications. Manufactured in China under quality control standards.

This diode belongs to the Discrete Semiconductor category and is suitable for electronic component, power management, and switching applications in industrial and commercial environments. Discover a broad range of DiodesZetex components and related semiconductor devices at EnvMart.

DiodesZetex Silicon Junction Switching Diode, Single, 1 A Forward Current, 200 V SMB Package MURS120-13-F
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Frequently Asked Questions

The maximum forward current of the MURS120-13-F diode is 1 ampere, ensuring reliable operation in switching circuits.

The peak reverse recovery time for this model is 25 nanoseconds, which supports efficient high-speed switching applications.

This diode operates within a wide temperature range from -55°C to 175°C, making it suitable for diverse industrial environments.

The diode has compact dimensions of 4.57 mm in length, 3.94 mm in width, and 2.3 mm in height, facilitating easy integration on PCBs.

The maximum peak reverse repetitive voltage for the MURS120-13-F is 200 volts, providing operational stability in various applications.

It is packaged in a compact SMB surface mount package, designed for surface mounting on electronic boards.

The peak non-repetitive forward surge current rating for this diode is 40 amperes, ensuring resilience during transient surge conditions.

The maximum forward voltage drop is 875 millivolts, which is optimized for efficiency in power applications.

This diode features a 2-pin configuration, suitable for various electronic applications.

It is designed for use in electronic, power, and switching diode applications, including power supplies and rectification circuits.

The MURS120-13-F diode is manufactured in China under quality control standards.

This model has a single diode configuration, which is typical for discrete semiconductor applications.

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