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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 2.3mm |
| Length | 4.57mm |
| Model | MURS120-13-F |
| Width | 3.94mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | SMB |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 40A |
| Maximum Forward Voltage Vf | 875mV |
| Peak Reverse Recovery Time trr | 25ns |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 200V |
DiodesZetex MURS120-13-F is a silicon junction switching diode characterized by its single diode configuration and a maximum forward current of 1 A. It is packaged in a compact SMB surface mount package delivering reliable performance in power and electronic component applications.
The diode operates efficiently within a wide temperature range from -55°C to 175°C, making it suitable for demanding industrial and electronic environments. Its fast switching capability is supported by a peak reverse recovery time of 25 nanoseconds, enhancing performance in high-speed circuits.
This 2-pin diode features a maximum peak reverse repetitive voltage of 200 V and a maximum forward voltage of 875 mV, balancing power efficiency and operational stability. The device can withstand a peak non-repetitive forward surge current of 40 A, ensuring robustness during transient surge conditions.
Dimensionally, the diode measures 4.57 mm in length, 3.94 mm in width, and 2.3 mm in height, allowing easy integration on surface-mounted electronics boards. These technical specifications make it ideal for applications ranging from power supplies, rectification circuits, to other switching diode uses in industrial, electronic equipment, and automotive systems.
Maximum forward current of 1 A ensures operational reliability in switching circuits. Peak reverse recovery time of 25 ns supports efficient high-speed switching. Compact SMB package facilitates surface mounting on PCBs.
Wide operating temperature range enhances device durability across environments. Low forward voltage drop at 875 mV improves efficiency. High surge current capability for resilience against transient events. Small package dimensions aid in space-saving PCB design.
Ideal for industrial, electronic, power, and automotive component applications. Manufactured in China under quality control standards.
This diode belongs to the Discrete Semiconductor category and is suitable for electronic component, power management, and switching applications in industrial and commercial environments. Discover a broad range of DiodesZetex components and related semiconductor devices at EnvMart.
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