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DiodesZetex Small Signal Dual NPN and PNP Transistor 200 mA, 160 V, 6-Pin SOT-363 MMDT5451-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 2.2mm
Model MMDT5451-7-F
Width 2.2mm
Mount Type Surface
Series MMDT
Maximum Operating Temperature 150°C
Package Type SOT-363
Minimum Operating Temperature -55°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo 160V
Minimum DC Current Gain hFE 30
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 180V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 200mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 300MHz

Key Features

  • This transistor is housed in a compact 6-pin SOT-363 package suitable for PCB mounting.
  • It operates efficiently within a temperature range of -55°C to 150°C.
  • Maximum power dissipation is 200 mW, supporting moderate power applications.
  • The transistor gains a minimum DC current gain of 30, suitable for signal amplification.
  • It features an isolated transistor configuration and NPN + PNP polarity for complementary circuit designs.
  • The device is compliant with the automotive standard AEC-Q101, ensuring reliability in automotive systems.
  • Maximum transition frequency is 300 MHz, making it useful for high-frequency electronic circuits.
  • Physical dimensions are compact with a length and width of 2.2 mm and height of 1.1 mm.

Product Description

DiodesZetex MMDT5451-7-F is a small signal dual NPN and PNP transistor designed primarily for surface mount technology (SMT) applications. It is delivered in a 6-pin SOT-363 package, which offers an ideal solution for high-density printed circuit boards (PCB).

This transistor supports a maximum DC collector current of 200 mA and a collector-emitter voltage rating of 160 V, making it suitable for a broad range of low to medium power amplification and switching applications. It features a maximum power dissipation of 200 mW and minimum DC current gain (hFE) of 30. The device is built with an isolated configuration and supports both NPN and PNP transistor polarities for flexible circuit designs.

Engineered for reliable performance, the MMDT5451-7-F transistor operates efficiently across an extended temperature range from -55°C up to +150°C, and meets the stringent automotive standard AEC-Q101, ensuring suitability for automotive and industrial environments. The transistor exhibits a high transition frequency of 300 MHz, making it appropriate for high-speed switching and signal processing applications.

This transistor features a compact 6-pin SOT-363 package with 2.2 mm length and width, and a height of 1.1 mm. The device enables efficient surface mounting and allows for improved production efficiency with tape supply packaging.

It offers a maximum collector base voltage VCBO of 180 V and a maximum emitter base voltage VEBO of 6 V. The transistor polarity is NPN + PNP, useful for complementary circuit designs and push-pull stages. It is widely used in industrial, electronics manufacturing, automotive electronics, and consumer devices requiring reliable bipolar transistors.

Set contains single MMDT5451-7-F transistor in 6-pin SOT-363 packaging supplied on tape for automated production lines. This product is ideal for design engineers and manufacturing applications requiring compact high-performance bipolar transistor solutions.

Explore EnvMart for a full range of Bipolar Transistors from renowned brands, including DiodesZetex and others, to meet your industrial and electronic component needs.

DiodesZetex Small Signal Dual NPN and PNP Transistor 200 mA, 160 V, 6-Pin SOT-363 MMDT5451-7-F
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for this model is 160 V.

This transistor has a minimum DC current gain (hFE) of 30, making it suitable for signal amplification.

The maximum power dissipation for the MMDT5451-7-F is 200 mW.

It operates efficiently within a temperature range of -55°C to 150°C.

This model is housed in a compact 6-pin SOT-363 package, suitable for surface mounting.

The maximum DC collector current (Idc) for this transistor is 200 mA.

The maximum transition frequency for this transistor is 300 MHz, making it suitable for high-speed applications.

The dimensions of the MMDT5451-7-F are 2.2 mm in length and width, and 1.1 mm in height.

This model is compliant with the automotive standard AEC-Q101, ensuring reliability in automotive systems.

The maximum emitter-base voltage (VEBO) for this model is 6 V.

The MMDT5451-7-F supports both NPN and PNP transistor polarities, allowing for flexible circuit designs.

Yes, the MMDT5451-7-F is designed for surface mount technology (SMT) applications, making it suitable for high-density printed circuit boards.

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