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| Country of Origin | China |
|---|---|
| Diameter | 5.6mm |
| Brand | Taiwan Semiconductor |
| Length | 9.5mm |
| Model | SF63G |
| Mount Type | Through Hole |
| Series | SF63G |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-201AD |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 6A |
| Peak Reverse Repetitive Voltage Vrrm | 150V |
| Diode Configuration | Single |
| Rectifier Type | Recovery |
| Peak Reverse Current Ir | 100μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 150A |
| Maximum Forward Voltage Vf | 975mV |
| Peak Reverse Recovery Time trr | 35ns |
Taiwan Semiconductor SF63G is a single recovery diode designed for discrete semiconductor applications, featuring a maximum continuous forward current of 6 A and peak reverse voltage of 150 V. Its through hole DO-201AD package offers robust mounting suitable for power rectification and switching tasks in electronic assemblies. The diode’s low forward voltage drop of 975 mV ensures efficient energy conversion while the 35 ns peak reverse recovery time supports fast electronic switching.
This diode is engineered to operate reliably across a wide temperature range from -65°C minimum to 150°C maximum, making it suitable for industrial, laboratory, and electronic manufacturing environments. Its compact form factor with a length of 9.5 mm and diameter of 5.6 mm facilitates easy integration into printed circuit boards. The peak non-repetitive forward surge current rating of 150 A enhances robustness during transient load conditions.
Typical applications include power supplies, rectifiers, and recovery circuits within various electrical and electronics components. The SF63G is a quality product manufactured in China and meets industrial requirements despite no specific certifications or automotive standards declared. This Schottky diode combines performance reliability and compact design for demanding electronic applications.
Through hole mounting for reliability in electronic circuits. Single diode configuration optimized for recovery applications. Low forward voltage of 975 mV for efficient conduction. Peak reverse recovery time of 35 ns for fast switching.
Operates safely within temperature range of -65°C to 150°C. Compact dimensions: 9.5 mm length, 5.6 mm diameter for easy PCB integration. High surge current capability up to 150 A peak non-repetitive forward surge. Peak reverse current limited to 100 μA ensuring low leakage.
Manufactured in China with consistent quality standards. Explore EnvMart’s range of semiconductor diodes and electronic components for application-specific solutions and reliable sourcing.
Explore more products in our Schottky Diodes & Rectifiers category.
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