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STMicroelectronics MDmesh SuperMESH Type N-Channel MOSFET, 8.3 A, 1 kV, Enhancement Mode, 3-Pin TO-247 STW11NK100Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW11NK100Z |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 8.3A |
| Maximum Drain Source Voltage Vds | 1kV |
| Maximum Drain Source Resistance Rds | 1.38Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 230W |
| Typical Gate Charge Qg @ Vgs | 113nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.6V |
Key Features
- This MOSFET features a TO-247 3-pin package suitable for through-hole mounting.
- The device has a maximum power dissipation of 230 watts and supports operation up to 150°C.
- Maximum drain to source resistance is 1.38 ohms ensuring efficient switching.
- Typical gate charge at Vgs is 113 nC for responsive control performance.
- It operates reliably down to a minimum temperature of -55°C.
- Designed as part of the MDmesh SuperMESH series for robust industrial applications.
- Maximum gate to source voltage is rated at 30 volts to ensure gate protection.
- Forward voltage of 1.6 V optimizes conduction losses.
Product Description
STMicroelectronics STW11NK100Z is an MDmesh SuperMESH Type N-Channel MOSFET transistor designed for high voltage and current applications. This enhancement mode MOSFET supports a maximum continuous drain current of 8.3 A and a maximum drain-source voltage up to 1 kV, suitable for demanding power switching environments.
Enclosed in a robust TO-247 3-pin package, the device offers thermal stability with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It delivers a maximum power dissipation rating of 230 W, making it apt for industrial, electronic control, and power conversion applications.
The MOSFET features a low maximum drain-source resistance of 1.38 Ω, enabling efficient energy usage and minimal heat generation. With a typical gate charge of 113 nC at standard gate voltage, the transistor ensures swift switching capabilities for enhanced circuit performance.
It is engineered with gate protection at 30 V maximum gate-to-source voltage and exhibits a forward voltage of 1.6 V. Compact external dimensions support easy integration into various PCB layouts and assemblies.
This MOSFET is suited for industrial power systems requiring reliable high-voltage switching. Commonly employed in power supplies, motor controls, and energy management circuits. Its rugged design supports use in manufacturing, industrial automation, and electronic component assemblies.
Through-hole mounting style facilitates convenient installation on printed circuit boards. STMicroelectronics MDmesh SuperMESH MOSFETs provide superior performance for industrial and electronic applications. Package contains 1 PC STMicroelectronics STW11NK100Z MOSFET transistor.
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Frequently Asked Questions
The maximum continuous drain current for the STW11NK100Z MOSFET is 8.3 A.
It can handle a maximum drain-source voltage of 1 kV.
The maximum power dissipation rating is 230 watts.
The dimensions of the TO-247 package are 20.15 mm in height, 15.75 mm in length, and 5.15 mm in width.
The typical gate charge at Vgs is 113 nC.
The maximum gate-source voltage is rated at 30 volts.
The forward voltage is 1.6 V, which optimizes conduction losses.
It operates reliably within a temperature range of -55°C to 150°C.
The maximum drain-source resistance is 1.38 ohms.
This model supports through-hole mounting.
It belongs to the MDmesh SuperMESH series.
It is suitable for industrial power systems, power supplies, motor controls, and energy management circuits.
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