STMicroelectronics MDmesh SuperMESH Type N-Channel MOSFET, 6.5 A, 1 kV, Enhancement Mode, 3-Pin TO-220 Package STP8NK100Z

STMicroelectronics STP8NK100Z is a high-voltage N-Channel MOSFET transistor utilizing MDmesh SuperMESH technology, offered in a robust 3-pin TO-220 package. It is engineered for demanding industrial, electronic component, power management, and semiconductor applications where efficient switching and durability are critical. The enhancement mode channel provides reliable control with a maximum continuous drain current of 6.5 amperes and a drain-source voltage capability of up to 1 kilovolt, enabling its use in high-voltage power circuits.

This MOSFET features a low maximum drain-source resistance (1.85 ohms) which reduces conduction losses, enhancing overall power efficiency. It can withstand maximum power dissipation of 160 watts, making it suited for applications requiring substantial power handling. Its typical gate charge of 73 nC at gate-source voltage ensures fast switching capabilities, optimizing performance in switching power supplies and motor control designs.

The device operates across a temperature range from -55 degrees Celsius to 150 degrees Celsius, supporting operation in harsh environmental conditions. The maximum gate-source voltage of ±30 V safeguards the transistor's gate integrity under transient voltages. The compact physical dimensions of 10.4 mm length, 9.15 mm height, and 4.6 mm width allow integration in space-constrained designs while the through-hole TO-220 mounting style ensures effective heat dissipation and mechanical stability.

Maximum continuous drain current of 6.5 A for reliable current capacity. Drain-source voltage up to 1 kV for high-voltage applications. Low drain-source resistance of 1.85 Ω reduces conduction losses. Maximum power dissipation rating of 160 W for robust performance.

Typical gate charge of 73 nC at Vgs supports fast switching. Operating temperature range from -55°C to 150°C for varied conditions. 3-pin TO-220 through hole package for easy mounting and cooling. Max gate-source voltage rating at 30 V protects gate from voltage spikes.

MDmesh SuperMESH design enhances electrical performance. Compact size: 10.4 mm x 9.15 mm x 4.6 mm.

This MOSFET is suited for use in industrial power control, electronic component assemblies, power supplies, and semiconductor applications requiring high-voltage, high-current switching. It supports design integration in electrical devices focused on power efficiency and durability. EnvMart offers this STMicroelectronics MOSFET for professional industrial and manufacturing needs in the semiconductor and power transistor categories.