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DiodesZetex Transistor NPN 3 A 12 V 3-Pin E-Line ZTX688BSTZ

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Model ZTX688BSTZ
Mount Type Through Hole
Series ZTX6X
Maximum Operating Temperature 200°C
Package Type E-Line
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 12V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 12V
Maximum Power Dissipation Pd 1W
Maximum DC Collector Current Idc 3A
Transistor Configuration Single
Maximum Transition Frequency ft 150MHz

Key Features

  • Maximum DC collector current of 3 amperes.
  • Maximum collector-emitter voltage rating of 12 volts.
  • E-Line package with 3 pins for through-hole mounting.
  • Minimum DC current gain (hFE) of 100.
  • Maximum power dissipation of 1 watt.
  • Operating temperature range from -55°C to 200°C.
  • Maximum transition frequency of 150 MHz.
  • NPN transistor polarity for general-purpose use.

Product Description

DiodesZetex ZTX688BSTZ Transistor is a high-performance, single NPN bipolar junction transistor packaged in an E-Line 3-pin configuration designed for through-hole mounting. It offers a maximum DC collector current of 3 amperes and a maximum collector-emitter voltage of 12 volts, making it suitable for numerous general-purpose amplification and switching applications.

This transistor features a minimum DC current gain (hFE) of 100 and a maximum power dissipation rating of 1 watt ensuring stable performance at varied load conditions. It is built with a transistor polarity of NPN and can operate reliably over a wide temperature range from -55°C to 200°C which allows it to perform efficiently in challenging industrial environments.

The maximum transition frequency of 150 MHz facilitates high-speed signal processing and switching tasks. The device is packaged in a through-hole E-Line type housing which is preferred for robust mechanical mounting in electronic circuit boards.

This transistor is ideal for use in electronic component assemblies within industrial, manufacturing, power supply, and consumer electronics sectors. Its robust electrical characteristics and thermal tolerances make it a dependable choice for powering and signal amplification needs.

Maximum DC collector current of 3 A. Maximum collector-emitter voltage of 12 V. E-Line package with 3-pin through-hole mounting. Minimum DC current gain of 100. Maximum power dissipation of 1 W. Operating temperature range from -55°C to 200°C.

Maximum transition frequency of 150 MHz. NPN transistor polarity configuration. Explore our extensive catalogue for more semiconductor devices and electronic components suitable for your industrial and laboratory needs at EnvMart.

Explore more products in our Bipolar Transistors category.

DiodesZetex Transistor NPN 3 A 12 V 3-Pin E-Line ZTX688BSTZ
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Frequently Asked Questions

The maximum DC collector current for this model is 3 amperes.

The maximum collector-emitter voltage rating is 12 volts.

This transistor has a minimum DC current gain (hFE) of 100.

The maximum power dissipation rating for this model is 1 watt.

The operating temperature range is from -55°C to 200°C.

The maximum transition frequency is 150 MHz.

It is packaged in an E-Line configuration with 3 pins for through-hole mounting.

This model features an NPN transistor polarity configuration.

The pin count for the ZTX688BSTZ is 3.

The maximum emitter-base voltage (VEBO) is 5 volts.

This transistor is suitable for general-purpose amplification and switching applications in industrial and consumer electronics.

It belongs to the ZTX6X series of transistors.

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