STMicroelectronics MDmesh SuperMESH Type N-Channel MOSFET, 9 A, 800 V, Enhancement Mode, 160 W Power Dissipation STW10NK80Z

STMicroelectronics STW10NK80Z is a high-performance MDmesh SuperMESH Type N-Channel MOSFET designed for robust power switching applications. It supports a maximum continuous drain current of 9 A and can withstand up to 800 V drain-source voltage, making it suitable for industrial, power management, and electronic component systems. This component uses enhancement mode channel technology to provide efficient switching with a typical gate charge of 72 nC, which helps reduce switching losses.

Encapsulated in a 3-pin TO-247 package with through-hole mount, this MOSFET offers excellent thermal management with a maximum power dissipation rating of 160 W, enabling sustained operation in demanding environments. Its maximum drain-source resistance of 900 mΩ ensures low conduction losses and improved thermal efficiency. The device is built to function reliably over a wide temperature range from -55°C to 150°C, accommodating harsh industrial and commercial usages.

Key mechanical dimensions include a height of 20.15 mm, length of 15.75 mm, and width of 5.15 mm, making it compatible with standard PCB layouts. Its maximum gate-source voltage rating of 30 V offers endurance against voltage spikes. This MOSFET does not carry any special approvals or automotive standard ratings, focusing on general industrial semiconductor applications.

High performance N-Channel MOSFET with MDmesh and SuperMESH technology. Maximum continuous drain current of 9 A for sustained power applications. Drain-source voltage rating of 800 V for use in high voltage circuits. Low typical gate charge of 72 nC for efficient switching operations.

Power dissipation up to 160 W suitable for industrial power converters. Through hole mounting in a TO-247 package ensures easy integration. Operating temperature range from -55°C to 150°C for reliability in harsh environments.

Compact footprint with 3 pins simplifies PCB assembly and design. Maximum drain-source resistance (Rds) of 900 milliohms reduces energy loss. Typical forward voltage of 1.6 V aides in efficient conduction.

This STMicroelectronics MDmesh SuperMESH MOSFET is ideal for industrial power electronics, renewable energy converters, motor drivers, and other applications requiring high voltage and current handling capabilities. Its robust thermal and electrical specs provide reliable performance in laboratory, industrial, manufacturing, and power distribution scenarios.

Explore more semiconductor devices and power MOSFETs at EnvMart to find high-quality components tailored for your technical and commercial projects.