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Nexperia N-Channel MOSFET Type 2N7002, 300 mA, 60 V, Enhancement Mode, 3-Pin SOT-23 2N7002 2N7002,215

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Nexperia N-Channel MOSFET Type 2N7002, 300 mA, 60 V, Enhancement Mode, 3-Pin SOT-23 2N7002 2N7002,215

Name: Nexperia N-Channel MOSFET Type 2N7002, 300 mA, 60 V, Enhancement Mode, 3-Pin SOT-23 2N7002 2N7002,215
Brand: Nexperia
SKU: 97794
Price: 0.06 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1mm
Length	3mm
Model	2N7002,215
Width	1.4mm
Mount Type	Surface
Series	2N7002
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-65°C
Pin Count	3
Channel Type	Type N
Maximum Continuous Drain Current Id	300mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	830mW
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.2V

Key Features

This MOSFET supports a maximum continuous drain current of 300 mA.
Maximum drain-source voltage (Vds) rating is 60 V ensuring operational safety.
Built with an enhancement type channel mode for efficient switching performance.
Low maximum drain-source resistance (Rds) of 5 ohms for optimized conduction.
Maximum power dissipation of 830 mW supports moderate power applications.
Operates safely within a temperature range from -65°C to 150°C.
Package is a compact SOT-23 with three pins for easy PCB integration.
Forward voltage (Vf) is 1.2 V, suitable for circuit designs requiring low voltage drop.

Product Description

Nexperia 2N7002 N-Channel MOSFET is a compact semiconductor device designed for efficient switching in electronic circuits. This component features a maximum continuous drain current of 300 mA and a maximum drain-source voltage of 60 V, making it suitable for low to moderate power applications requiring reliable performance.

Encased in a small 3-pin SOT-23 surface mount package, the 2N7002 enhances portability and ease of use on printed circuit boards. The enhancement channel mode MOSFET delivers low drain-source resistance of 5 ohms, contributing to energy efficiency and reduced heat generation during operation. The device supports a maximum power dissipation of up to 830 mW, with operating temperature limits from -65°C to 150°C which enables functionality under varied environmental conditions.

Additionally, this MOSFET's maximum gate-source voltage rating of 30 V and forward voltage of 1.2 V further ensure precise control and responsiveness in switching tasks. It finds applications in industrial electronics, power management circuits, semiconductor devices, and other electrical components.

This MOSFET supports a maximum continuous drain current of 300 mA. Maximum drain-source voltage rating of 60 V for operational safety. Enhancement channel mode with low drain-source resistance of 5 ohms. Power dissipation capability up to 830 mW for moderate power use.

Operates between -65°C to 150°C for use in diverse conditions. Compact 3-pin SOT-23 surface mount package for easy PCB integration. Forward voltage of 1.2 V reducing power loss in switching. Maximum gate-source voltage of 30 V for precise control.

Manufactured in China ensuring quality and consistency. Ideal for electronic, semiconductor, and discrete semiconductor applications. Explore our wide range of semiconductor components and MOSFETs at EnvMart for reliable industrial and commercial electronic assembly solutions.