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Infineon IPD Type N-Channel MOSFET 180A 100V TO-252 Surface Mount 3-Pin IPD50N10S3L16ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPD50N10S3L16ATMA1 |
| Mount Type | Surface |
| Series | IPD |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 180A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Rated at 180A continuous drain current with a maximum drain-source voltage of 100V.
- Offers low Rds(on) of 0.7mΩ, optimizing energy use and thermal management.
- TO-252 surface-mount package with 3-pin configuration for easy PCB integration.
- Designed for automotive and industrial uses, compliant with AEC-Q101 standards.
- Supports up to 81W power dissipation and handles a wide temperature range from -55°C to 175°C.
- RoHS compliant and 100% avalanche tested for durability.
Product Description
Infineon IPD50N10S3L16ATMA1 N-channel MOSFET is engineered for high-performance automotive and industrial electronic systems. As part of the OptiMOSTM series, it combines robustness with energy-efficient switching characteristics. The device's enhancement mode ensures precise control in power conversion, motor drives, and battery management circuits.
Rated for 180A continuous drain current with a maximum drain-source voltage of 100V. Low drain-source resistance (Rds(on)) of 0.7mΩ minimizes conduction losses and contributes to efficient thermal dissipation. TO-252 surface-mount package is ideal for automated assembly and compact PCB layouts.
Automotive-grade AEC-Q101 compliance guarantees reliability in harsh environments. Wide operating temperature range from -55°C to 175°C enables use in demanding applications. Typical gate charge (Qg) of 80nC supports fast switching operations.
Peak gate-source voltage up to 20V accommodates robust circuit designs. RoHS-certified and 100% avalanche tested, ensuring long-term product integrity.
The MOSFET is suited for inverter circuits, DC-DC converters, and power management modules across automotive, industrial, and renewable energy applications. Surface-mount design facilitates large-scale manufacturing and maintenance. Used in systems requiring high current handling, high-speed switching, and efficient thermal performance.
Industrial applications include power supplies, motor control units, uninterruptible power supplies (UPS), battery packs, and energy storage systems. Laboratory uses span evaluation boards and advanced signal processing.
Automotive applications benefit from AEC-Q101 qualification, supporting electric powertrain, charging infrastructure, and safety electronics. Explore more Infineon MOSFET solutions in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is rated at 180A.
It can handle a maximum drain-source voltage of 100V.
This N-channel MOSFET features a low drain-source resistance (Rds(on)) of 0.7mΩ.
The typical gate charge (Qg) at Vgs is 80nC, which supports fast switching operations.
It operates within a wide temperature range from -55°C to 175°C.
This model comes in a TO-252 surface-mount package with a 3-pin configuration.
Yes, it is compliant with AEC-Q101 standards, ensuring reliability in automotive applications.
It supports a maximum power dissipation of 81W.
This MOSFET is suitable for applications such as inverter circuits, DC-DC converters, and power management modules in automotive and industrial sectors.
The maximum gate-source voltage (Vgs) is up to 20V, accommodating robust circuit designs.
The country of origin for this MOSFET is India.
This model is RoHS compliant, ensuring it meets environmental standards.
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