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Infineon IPLK80R900P7ATMA1 N-Channel MOSFET 4.5A 800V 5-Pin ThinPAK 5x6 Surface Mount
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 6.42mm |
| Model | IPLK80R900P7ATMA1 |
| Mount Type | Surface |
| Series | IPL |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK 5x6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 4.5A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 1.2mΩ |
| Maximum Power Dissipation Pd | 43W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 3V |
| Forward Voltage Vf | 0.9V |
Key Features
- Advanced N-channel MOSFET designed for high-efficiency switching applications.
- Supports continuous drain current up to 4.5A and maximum 800V drain-source voltage.
- Utilizes ThinPAK 5x6 surface-mount package for space-saving PCB layouts.
- Integrated Zener Diode ESD protection enhances device resilience.
- Low RDS(on) ensures reduced conduction losses and improved efficiency.
- Optimized for flyback converters, industrial SMPS, and auxiliary power supplies.
- Compliant with automotive AEC-Q101 and RoHS standards.
- Suitable for automated assembly processes in production environments.
Product Description
Infineon introduces the IPLK80R900P7ATMA1 N-Channel MOSFET, engineered for high-voltage and high-efficiency switching operations in a broad range of power electronics applications. This device is designed to handle a maximum continuous drain current of 4.5A at drain-source voltages up to 800V, providing both robustness and flexibility for industrial environments.
The ThinPAK 5x6 surface-mount package offers a notably compact footprint (5x6 mm2) and an ultra-low profile of 1 mm. This enables high power density, making it ideal for densely packed PCBs where space and thermal management are critical.
Equipped with best-in-class RDS(on) and integrated Zener Diode ESD protection, the IPLK80R900P7ATMA1 ensures reliable operation, reduced switching losses, and excellent electromagnetic performance. Gate threshold voltage is tightly controlled, aiding precise gate drive and enhancing system stability.
Supports flyback applications (adapters, chargers, audio SMPS, industrial auxiliary power). Improves system efficiency and reduces thermal dissipation by up to 0.6% and 8°C, respectively, compared to previous generation devices.
Fully compliant with automotive AEC-Q101 and RoHS directives, supporting a wide deployment, including automotive and industrial sectors. Mount type: Surface, with a 5-pin structure for straightforward machine assembly. Low EMI and optimized switching characteristics for modern high-frequency applications.
Package enables automated insertion and increased production efficiency for volume manufacturing.
Whether used in power supplies, adapters, or industrial automation, this Infineon MOSFET ensures dependable operation, low parasitic effects, and robust protection features, making it a preferred choice for engineers seeking quality semiconductors for demanding applications.
Explore more cutting-edge MOSFET solutions from Infineon and other global semiconductor leaders in EnvMart's extensive semiconductor category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.5A.
It supports a maximum drain-source voltage of 800V.
The ThinPAK 5x6 package has dimensions of 5x6 mm² and an ultra-low profile of 1 mm.
The operating temperature range is from -55°C to 150°C.
The maximum drain-source resistance (RDS(on)) is 1.2mΩ.
Yes, it is compliant with the automotive AEC-Q101 standard.
The typical gate charge (Qg) at Vgs is 80nC.
It uses a surface mount type for installation.
The maximum power dissipation is 43W.
It features integrated Zener Diode ESD protection, which enhances device resilience.
It is optimized for flyback converters, industrial SMPS, and auxiliary power supplies.
The forward voltage (Vf) is 0.9V.
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