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Infineon IPL Type N-Channel MOSFET 9.4A 700V 5-Pin ThinPAK 5x6 IPLK70R2K0P7ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 6.35mm |
| Model | IPLK70R2K0P7ATMA1 |
| Mount Type | Surface |
| Series | IPL |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK 5x6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 9.4A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 1.2mΩ |
| Maximum Power Dissipation Pd | 25.5W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 3V |
| Forward Voltage Vf | 0.9V |
| Drain Current | 9.4 A |
Key Features
- Offers high efficiency and low losses with CoolMOS™ P7 technology.
- Suitable for industrial and power electronics applications.
- ThinPAK 5x6 package enables space-saving PCB design.
- Integrated ESD protection diode enhances device robustness.
- Low RDS(on) of 1.2mΩ ensures minimal conduction losses.
- AEC-Q101 qualified for automotive standards compliance.
- Surface mount design simplifies manufacturing workflow.
Product Description
Infineon IPLK70R2K0P7ATMA1 N-Channel MOSFET provides superior performance with a continuous drain current of 9.4A and a drain-source voltage rating of 700V, making it ideal for demanding industrial and commercial power applications. The device utilizes Infineon's CoolMOS™ P7 platform, delivering benchmark low parasitic characteristics and excellent thermal behavior, while the ThinPAK 5x6 package enables a compact footprint to maximize power density and minimize PCB space usage.
Engineered for surface mount technology, this MOSFET features integrated ESD protection diodes and is qualified to AEC-Q101 automotive standards, ensuring high reliability in mission-critical environments. Its low RDS(on) of just 1.2mΩ means minimal energy wastage and efficient operation, crucial for flyback topologies and power conversion circuits.
Additional device features include support for a gate charge of 80nC and power dissipation up to 25.5W, allowing robust performance even at elevated power levels. The recommended operation range is from -55°C to 150°C, satisfying industrial temperature requirements. The ThinPAK 5x6 form factor facilitates mechanical design flexibility, with a height of only 1mm, suitable for densely populated boards.
Infineon IPLK70R2K0P7ATMA1 MOSFET combines a small footprint, low profile, and high efficiency for contemporary electronics. RoHS compliant and fully qualified to JEDEC industrial standards enhances reliability and environmental compliance.
Wide range of RDS(on) values within the CoolMOS™ portfolio offers design flexibility. Best-in-class EMI characteristics support sensitive applications. Optimized for flyback and other switching power topologies. Surface mount enables high-volume production efficiency.
Industry-leading thermal performance preserves device longevity.
This semiconductor component is recommended for professional applications across the electronics, industrial automation, HVAC controls, and commercial equipment sectors. Use cases include high-efficiency power supplies, converters, LED drivers, and automotive electronics.
For more choices within MOSFETs or other Infineon products, browse the EnvMart catalog under Electronics & Electricals > Semiconductor > MOSFET.
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Frequently Asked Questions
The Infineon IPLK70R2K0P7ATMA1 has a maximum continuous drain current of 9.4A.
This model has a maximum drain-source voltage rating of 700V.
The maximum drain-source resistance (RDS(on)) for this unit is 1.2mΩ.
The recommended operating temperature range is from -55°C to 150°C.
It uses a ThinPAK 5x6 package, which allows for a compact footprint.
The typical gate charge (Qg) at Vgs is 80nC.
Yes, it is AEC-Q101 qualified, making it suitable for automotive standards compliance.
The maximum power dissipation for this MOSFET is 25.5W.
This model has a pin count of 5.
The forward voltage (Vf) for this MOSFET is 0.9V.
It is designed for surface mount technology, which simplifies manufacturing workflows.
This unit is RoHS compliant and fully qualified to JEDEC industrial standards.
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