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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | 2ED2103S06FXUMA1 |
| Mount Type | Board |
| Series | 2ED |
| Output Current | 290mA |
| Maximum Operating Temperature | 125°C |
| Package Type | DSO |
| Minimum Operating Temperature | -40°C |
| Number of outputs | 2 |
| Rise Time | 170ns |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q100 |
| Maximum Supply Voltage | 20V |
| Minimum Supply Voltage | 10V |
| Number of Drivers | 2 |
| Fall Time | 35ns |
| Driver Type | General Purpose |
Infineon 2ED2103S06FXUMA1 is a high-voltage, high-speed MOSFET and IGBT gate driver IC, engineered for robust and efficient switching in a variety of industrial and automotive electronics. Featuring a dual-channel design with independent high- and low-side referenced output channels, it provides reliable isolation and precise control for power semiconductor devices in demanding environments.
This gate driver delivers up to 290 mA output current, making it ideal for applications requiring fast switching and high system efficiency. The device supports operational logic across negative voltages and includes an integrated, ultra-fast, low-resistance bootstrap diode for seamless high-side drive operation. The 8-pin DSO package is compact and suitable for surface-mount processes, allowing space conservation on crowded PCBs.
The 2ED2103S06FXUMA1 provides robust noise immunity and rugged performance through its advanced internal architecture, effectively protecting against voltage spikes and eliminating parasitic latch-up scenarios. Its independent undervoltage lockout functions for both channels further enhance system safety.
Key technical highlights include a wide input supply range from 10 V to 20 V, fast rise and fall times (170 ns and 35 ns respectively), and a working temperature window of -40°C up to 125°C. Full compliance with AEC-Q100 and RoHS directives means suitability for automotive and harsh industrial environments.
Delivers robust high- and low-side gate driving for MOSFET and IGBT devices. Features a maximum output current of 290 mA for quick switching capability. Operates between 10 V and 20 V supply voltage for versatile integration.
Compact 8-pin DSO surface-mount package with independent dual channels. Ultra-fast integrated bootstrap diode enables efficient high-side operation. Ensures noise immunity and ruggedness against voltage transients. Complies with AEC-Q100 automotive and RoHS standards.
Wide operating temperature range from -40°C to 125°C for demanding environments.
This gate driver IC is suited for use in industrial automation, electric drives, inverter systems, motor controls, switching power supplies, and automotive ECUs. Its reliability and performance ensure maximized efficiency and safety in power conversion and management circuits.
Explore more Infineon Gate Drivers, MOSFET drivers, and high-speed switching components in the EnvMart Electronics & Electricals - Semiconductor category.
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