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Infineon IPP055N08NF2S N-Channel Power MOSFET 18.5A 80V TO-220 Package IPP055N08NF2S
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.45mm |
| Length | 10.36mm |
| Model | IPP055N08NF2S |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | IPP055N08NF2S |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 18.5A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 5.5mΩ |
| Maximum Power Dissipation Pd | 107W |
| Typical Gate Charge Qg @ Vgs | 36nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- N-channel enhancement type MOSFET designed for efficient power switching.
- Maximum drain current of 18.5A ensures robust handling of high-load circuits.
- Supports drain-source voltage up to 80V for versatile use in power supplies and converters.
- TO-220 package with through-hole mounting for easy integration into PCBs.
- Low Rds(on) of 5.5mΩ minimizes conduction losses and improves efficiency.
- Typical gate charge of 36nC at Vgs for rapid switching performance.
- Operates within a wide temperature range from -55°C to 175°C.
- Maximum power dissipation of 107W suited for high-power applications.
Product Description
Infineon IPP055N08NF2S N-Channel Power MOSFET features advanced design for reliable switching and efficient conduction in demanding power management systems. With a max drain current of 18.5A and a drain-source voltage rating of 80V, this device is suitable for a range of industrial, automotive, and electronic applications where high current and voltage handling is critical.
N-channel enhancement mode MOSFET offering precise control and high-speed operation. TO-220 package, through-hole design, ideal for PCB assembly and soldering in electronic manufacturing. Low Rds(on) of 5.5mΩ ensures reduced energy loss, supporting high efficiency in switching circuits.
Maximum power dissipation of 107W, appropriate for power amplifiers, drivers, and motor control systems. Gate-source voltage up to 20V and typical gate charge of 36nC, facilitating quick response times. Operating temperature as low as -55°C and up to 175°C, offering durability in harsh environments.
3-pin standard TO-220 footprint for drop-in replacement and compatibility with existing designs.
This MOSFET is commonly used in industrial control systems, power supplies, converters, DC-DC modules, and automotive circuits, thanks to its high-speed switching, thermal stability, and rugged design. It serves electronic designers and engineers seeking dependable transistor solutions for power switching and regulation.
Applications include industrial automation, laboratory instrumentation, commercial and consumer electronics, and custom PCB projects. Browse more Infineon MOSFETs and semiconductor components in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The Infineon IPP055N08NF2S has a maximum continuous drain current of 18.5A.
This model supports a maximum drain-source voltage of 80V.
The device comes in a TO-220 package and features a through-hole mounting design.
It has a maximum power dissipation rating of 107W, suitable for high-power applications.
The typical gate charge at Vgs for the IPP055N08NF2S is 36nC, facilitating rapid switching performance.
This unit operates within a wide temperature range from -55°C to 175°C.
The maximum drain-source resistance (Rds(on)) is 5.5mΩ, which helps minimize conduction losses.
The IPP055N08NF2S has a pin count of 3.
The maximum gate-source voltage (Vgs) for this MOSFET is 20V.
This model is commonly used in industrial control systems, power supplies, converters, and automotive circuits.
The forward voltage (Vf) for the IPP055N08NF2S is 1.2V.
This device features an N-channel enhancement type design.
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