Infineon N-Channel MOSFET 18A 650V TO-220 IPA65R

Infineon IPA65R045C7XKSA1 N-Channel MOSFET, model IPA65R045C7XKSA1, features advanced technology for robust performance in demanding environments. This enhancement mode MOSFET provides a maximum continuous drain current of 18A and a drain source voltage of 650V, making it ideal for industrial power control.

The device is delivered in a TO-220 3-pin package, simplifying installation and integration into power circuits. Its low drain source resistance of 45mΩ delivers superior conduction efficiency, reducing energy losses and enabling higher power density.

As part of the Infineon CoolMOS™ C7 superjunction series, this MOSFET improves safety margins and delivers enhanced efficiency across various load conditions. It's particularly suitable for SMPS, solar inverter, and other high-voltage industrial applications.

Maximum drain source voltage: 650V enables usage in high-voltage systems. Continuous drain current: 18A supports high-power switching. Low RDS(on): 45mΩ minimizes conduction losses. TO-220 package ensures ease of surface mounting.

Enhancement mode channel offers reliable control. Resistant to switching losses, improving performance at light loads. Industry-recognized Infineon quality for reliability. Commonly used in construction, energy, and manufacturing sectors, this MOSFET elevates efficiency standards for contemporary industrial electronics.

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