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Infineon N-Channel MOSFET 80A 55V TO-220, Enhancement Mode, 3-Pin, Automotive Grade IPP80N06S207AKSA4
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPP80N06S207AKSA4 |
| Mount Type | Through Hole |
| Series | IPP |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 6.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250W |
| Typical Gate Charge Qg @ Vgs | 86nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- N-channel, enhancement-mode MOSFET designed for high efficiency and low Rds(on).
- Maximum continuous drain current of 80 A and maximum drain source voltage of 55 V.
- 3-pin TO-220 package, ideal for through-hole mounting applications.
- Automotive AEC-Q101 qualified for high reliability and rugged performance.
- Ultra-low Rds(on) of 6.6 mΩ for reduced conduction losses.
- Operates across a wide temperature range from -55°C to 175°C.
- Features up to 250 W power dissipation and typical gate charge of 86 nC at Vgs.
- Forward voltage of 1.3 V ensures low voltage drop during operation.
Product Description
The Infineon IPP80N06S207AKSA4 is an automotive-grade N-channel MOSFET engineered for demanding power switching and efficiency-critical applications. This device is capable of handling a maximum continuous drain current of 80 A and a maximum drain source voltage of 55 V, making it ideal for use in automotive, industrial, motor control, and high-performance switching designs.
Crafted in a 3-pin TO-220 through-hole package, this enhancement-mode MOSFET provides ease of integration onto power PCBs and offers superior heat management. The ultra-low on-resistance (Rds(on)) of just 6.6 mΩ minimizes conduction losses, significantly improving system efficiency in power distribution and drive circuits.
With its AEC-Q101 qualification, this device is suited for automotive environments where reliability and consistent performance are critical. It is tested for 100% Avalanche capability, supporting robust operation even under stressful load dump conditions. The MOSFET offers up to 250 W maximum power dissipation and a typical gate charge of 86 nC at the recommended Vgs, ensuring rapid and efficient switching with minimal energy waste.
Operational reliability is enhanced with an extended temperature range from -55°C to 175°C, supporting high-stress industrial and vehicular operating environments. The forward voltage of 1.3 V ensures a low conduction drop, while the 20 V maximum gate-source voltage allows flexibility in gate drive arrangements.
N-channel, enhancement-mode MOSFET with ultra-low Rds(on) for efficient power switching. Handles up to 80 A continuous drain current and withstands 55 V Vds. Standard TO-220 (3-pin) package suitable for through-hole PCB installations.
Fully automotive qualified (AEC-Q101) for reliability in vehicle electronics and power management. Wide operating temperature range of -55°C to 175°C for robust field use.
Common industrial uses include automotive electric drives, power inverters, battery management systems, industrial switch-mode power supplies, DC-DC converters, and high-frequency power switching.
Package includes one Infineon IPP80N06S207AKSA4 N-Channel MOSFET. Browse more high-performance MOSFETs and semiconductors on EnvMart for all your electronics and automotive needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 80 A.
This N-channel MOSFET has a maximum drain-source voltage rating of 55 V.
It comes in a TO-220 package type, which is suitable for through-hole mounting applications.
The ultra-low Rds(on) value for this MOSFET is 6.6 mΩ, which helps reduce conduction losses.
It operates across a wide temperature range from -55°C to 175°C.
The typical gate charge at the recommended Vgs is 86 nC.
Yes, it is AEC-Q101 qualified, making it suitable for automotive applications requiring high reliability.
The maximum power dissipation for this MOSFET is 250 W.
The forward voltage drop during operation is 1.3 V.
The maximum gate-source voltage for this model is 20 V.
This device has a 3-pin configuration.
This model is suitable for automotive electric drives, power inverters, battery management systems, and industrial switch-mode power supplies.
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