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Nexperia N-Channel MOSFET, 360 mA, 60 V, SOT-23 Package, Enhancement Mode 2N7002P,215

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Nexperia N-Channel MOSFET, 360 mA, 60 V, SOT-23 Package, Enhancement Mode 2N7002P,215

Name: Nexperia N-Channel MOSFET, 360 mA, 60 V, SOT-23 Package, Enhancement Mode 2N7002P,215
Brand: Nexperia
SKU: 87909
Price: 0.04 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1mm
Length	3mm
Model	2N7002P,215
Width	1.4mm
Mount Type	Surface
Series	2N7002P
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type N
Maximum Continuous Drain Current Id	360mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	1.6Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	420mW
Typical Gate Charge Qg @ Vgs	0.6nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1V

Key Features

Offers a maximum continuous drain current of 360 mA for reliable switching and amplification applications.
Features a maximum drain source voltage of 60 V for robust performance in a variety of circuit designs.
Utilizes enhancement mode operation, providing efficient control of current flow.
Compact SOT-23 surface mount package with a 3-pin configuration, ideal for space-constrained PCB layouts.
Maximum drain source resistance of 1.6 Ω ensures low on-state loss and efficient operation.
Rated for a maximum power dissipation of 420 mW, suitable for demanding designs.
Operates over a wide temperature range from -55°C to 150°C for stability in harsh environments.
Maximum gate source voltage of 20 V allows flexible drive control from various logic levels.

Product Description

The Nexperia 2N7002P,215 is a high-quality N-channel MOSFET designed for professional electronic and industrial applications. With a 360 mA maximum continuous drain current and a maximum drain source voltage of 60 V, this component delivers reliable performance for switching, amplification, and circuit protection needs.

Built in an enhancement mode, the 2N7002P,215 offers efficient current control, making it suitable for applications ranging from low-power signal switching to higher current handling circuits. The compact SOT-23 surface mount package is optimized for PCB designs where space and layout efficiency are critical, and its three-pin configuration simplifies integration into automated production lines.

The MOSFET's maximum drain source resistance of 1.6 Ω reduces on-state losses, ensuring that designs remain energy efficient even under demanding conditions. Rated for a power dissipation up to 420 mW, the device can handle moderate power loads without excessive heating or performance degradation.

With an operating temperature range from -55°C to 150°C, the Nexperia 2N7002P,215 maintains stability and reliability in extreme environments, including in industrial and commercial settings. Its maximum gate source voltage of 20 V and typical gate charge of 0.6 nC enable quick switching and flexible drive options from a range of logic sources.

The 1 mm height, 3 mm length, and 1.4 mm width allow for compact installations, and the MOSFET is designed to meet rigorous standards required for robust electronics. Its forward voltage of 1 V and channel type 'N' make it compatible with standard drive circuits and enable straightforward integration into larger systems.

Engineers and designers rely on the 2N7002P,215 for laboratory, manufacturing, commercial, and industrial electronics projects, including automated systems, power management circuits, signal switching, and control interfaces. Despite its small footprint, the device ensures high reliability and performance, and its surface mount construction supports high-volume assembly.

Explore the Nexperia MOSFET catalog on EnvMart for a diverse range of discrete semiconductor solutions tailored for advanced electronic applications.