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Infineon SIPMOS P-Channel MOSFET 1.9A 60V Enhancement SOT-223 BSP171PH6327XTSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.6mm
Length 6.5mm
Model BSP171PH6327XTSA1
Width 3.5mm
Mount Type Surface
Series SIPMOS
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 1.9A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 300mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.8W
Typical Gate Charge Qg @ Vgs 13nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf -1.1V

Key Features

  • Features a maximum continuous drain current of 1.9A.
  • Handles drain-to-source voltages up to 60V for robust operation.
  • P-channel enhancement mode supports rapid and efficient switching.
  • Compact SOT-223 surface-mount package conserves PCB space.
  • Low Rds(on) minimizes power loss, ideal for power management.
  • High thermal tolerance up to 150°C for reliability in harsh conditions.
  • Conforms to AEC-Q101 automotive standard.
  • Suited for load switching, power supply circuits, and industrial electronics.

Product Description

Infineon BSP171PH6327XTSA1 is a high-performance SIPMOS P-Channel MOSFET engineered for modern power management and switching circuits. With a maximum continuous drain current rating of 1.9A and a maximum drain-to-source voltage of 60V, it is tailored for applications demanding efficient switching and reliable operation under varying conditions. Operating in enhancement mode, this MOSFET leverages advanced SIPMOS technology to optimize both speed and power efficiency.

Designed with a compact 4-pin SOT-223 surface-mount package, the device is ideal for high-density PCB layouts where space is at a premium. The low Rds(on) of 300mΩ ensures minimal power dissipation during switching, making it a practical choice for battery-powered and energy-sensitive devices. Furthermore, its ability to operate across a wide temperature range, from -55°C up to +150°C, guarantees robust performance in severe industrial and automotive environments.

The BSP171PH6327XTSA1 supports gate-source voltages up to 20V and features a typical gate charge of 13nC, facilitating swift control signal response and efficient integration into high-frequency systems. Its forward voltage of -1.1V and 1.8W power dissipation capability contribute to enhanced durability and suitability for load switching, power supply regulation, and driving high-frequency loads in consumer electronics, automotive systems, and industrial automation platforms.

This MOSFET is rated under the AEC-Q101 automotive standard, ensuring reliability for automotive electronics and advanced power management circuits found in contemporary vehicles. It also meets the strict demands of industrial and commercial circuit designs, especially where space-saving and heat management are critical design factors.

Utilize the BSP171PH6327XTSA1 for applications such as automotive load switching, energy-efficient power management modules, rapid switching in high-frequency converters, consumer electronic power supplies, and other environments demanding compact, high-reliability switching components.

For engineers and designers seeking robust, space-saving, and thermally resilient MOSFET solutions, the Infineon BSP171PH6327XTSA1 delivers proven performance for both automotive and industrial circuit requirements.

Explore more high-performance semiconductor components and power MOSFETs in the Electronics & Electricals > Semiconductor > MOSFET category from Infineon at EnvMart.

Infineon SIPMOS P-Channel MOSFET 1.9A 60V Enhancement SOT-223 BSP171PH6327XTSA1
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Frequently Asked Questions

The maximum continuous drain current of this model is 1.9A.

It can handle drain-to-source voltages up to 60V.

This model uses a compact SOT-223 surface-mount package.

It operates within a temperature range of -55°C to +150°C.

The Rds(on) value is 300mΩ, which helps minimize power loss.

It conforms to the AEC-Q101 automotive standard.

The typical gate charge is 13nC at Vgs.

It has a maximum power dissipation capability of 1.8W.

The dimensions are 6.5mm in length, 3.5mm in width, and 1.6mm in height.

It features a P-channel enhancement mode.

It is suited for load switching, power supply circuits, and industrial electronics.

The maximum gate-source voltage is 20V.

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