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ROHM N-Channel MOSFET SC-96 Surface Mount, 2.5A, 30V, Enhancement Mode, 118mΩ Rds, 3-Pin, RQ5E025SNTL
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 0.95mm |
| Length | 3mm |
| Model | RQ5E025SNTL |
| Width | 1.8mm |
| Mount Type | Surface |
| Series | RQ5E025SN |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-96 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 2.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 118mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Typical Gate Charge Qg @ Vgs | 2.9nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features a maximum continuous drain current of 2.5A and drain source voltage of 30V.
- Low on-resistance of 118mΩ for efficient switching operation.
- Enhancement mode operation and built-in gate-source protection diode.
- Compact SC-96 surface mount package with 3-pin configuration.
- Suitable for high-speed switching applications and low-power electronic devices.
- Operates in environments from -55°C to 150°C.
- Offers a power dissipation capacity of up to 1W.
- Pb-free lead plating ensures environmental compliance.
Product Description
ROHM RQ5E025SNTL is a N-Channel MOSFET designed for efficient electronic switching applications. With a maximum continuous drain current of 2.5A and a drain-source voltage rating of 30V, this device reliably operates in demanding circuits where low resistance and fast switching are essential. The enhancement mode channel offers superior performance and is complemented by a built-in gate-source (G-S) protection diode, providing robust protection against voltage surges.
Its compact SC-96 surface mount package with three pins allows for easy integration into PCBs and minimizes space usage in dense electronic assemblies. The device achieves a low on-resistance of 118mΩ, making it ideal for applications where minimizing power loss is critical. It supports a typical gate charge of 2.9nC at 30V and a maximum gate-source voltage of 20V, ensuring compatibility with modern logic-level interfaces.
The RQ5E025SNTL operates over a broad temperature range from -55°C up to 150°C, making it suitable for industrial, commercial, and consumer electronics. Power dissipation is rated at up to 1W, offering reliability in applications such as motor drivers, power supplies, switching regulators, and signal control circuits.
With Pb-free lead plating and compliance to environmental requirements, it is a safe choice for eco-conscious designs. Its small form factor and surface mount capability further enhance its suitability for compact assemblies including portable and embedded systems.
Applications for the ROHM RQ5E025SNTL include industrial automation, laboratory instrumentation, commercial electronics, and automotive signal control (non-standard). The device's specifications make it particularly well-suited for switching, signal amplification, and low-voltage power management.
Features a maximum continuous drain current of 2.5A and drain source voltage of 30V. Low on-resistance of 118mΩ for efficient switching operation. Enhancement mode operation and built-in gate-source protection diode. Compact SC-96 surface mount package with 3-pin configuration.
Suitable for high-speed switching applications and low-power electronic devices. Operates in environments from -55°C to 150°C. Offers a power dissipation capacity of up to 1W. Pb-free lead plating ensures environmental compliance.
Explore more MOSFETs in the Semiconductor category with ROHM for reliable, high-performance electronic components at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.5A.
This MOSFET has a maximum drain-source voltage rating of 30V.
It features a low on-resistance of 118mΩ, which contributes to efficient switching operation.
The RQ5E025SNTL operates in environments from -55°C to 150°C.
It comes in a compact SC-96 surface mount package with a 3-pin configuration.
The power dissipation capacity is rated at up to 1W.
The typical gate charge at 30V is 2.9nC.
This model is suitable for applications such as motor drivers, power supplies, and signal control circuits.
The maximum gate-source voltage is 20V.
Yes, it includes a built-in gate-source protection diode for added reliability.
The country of origin for this MOSFET is India.
It operates in enhancement mode, which is designed for efficient electronic switching applications.
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