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Infineon SIPMOS N-Channel Depletion Mode MOSFET 120mA 600V 4-Pin SOT-223 BSP135H6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.6mm |
| Length | 6.5mm |
| Model | BSP135H6327XTSA1 |
| Width | 3.5mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120mA |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 45Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 3.7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports a maximum continuous drain current of 120mA for low power operations.
- Rated for high voltage operation up to 600V ensuring reliability in demanding applications.
- Compact 4-pin SOT-223 package designed for surface mount technology.
- Low gate charge of 3.7nC supports efficient high-frequency switching.
- Maximum power dissipation is 1.8W, requiring adequate thermal management.
- Wide operating temperature range from -55°C to 150°C suited for automotive and industrial use.
- Automotive qualified under the AEC-Q101 standard guaranteeing quality and reliability.
- Designed with SIPMOS® technology for enhanced efficiency and low conduction losses.
Product Description
Infineon BSP135H6327XTSA1 is a SIPMOS® series N-Channel depletion mode MOSFET optimized for efficient switching and power management applications. Featuring a maximum continuous drain current of 120mA and a high maximum drain-source voltage of 600V, it provides reliable operation in both automotive and industrial environments. The device is packaged in a compact 4-pin SOT-223 surface mount package, enabling space-saving on circuit boards while delivering high performance.
This MOSFET offers low gate charge of 3.7nC at Vgs, facilitating efficient high-frequency switching suitable for modern electronic devices. Its maximum power dissipation rating of 1.8W necessitates proper thermal management to maintain performance and prevent overheating. The device operates over a wide temperature range from -55°C to 150°C, making it suitable for harsh conditions.
Designed using Infineon's SIPMOS® technology, this MOSFET achieves improved conduction efficiency and low power consumption, characteristics desirable for power management and control circuit applications. Automotive qualification to the AEC-Q101 standard confirms its robustness and suitability for automotive systems.
Supports 120mA max continuous drain current for low power switching needs. High voltage capability of 600V ensures operational safety and reliability. Low gate charge enables use in high-frequency switching environments.
Compact and space-saving 4-Pin SOT-223 surface mount package. Wide temperature range from -55°C to 150°C for automotive and industrial applications. Automotive qualified AEC-Q101 for quality assurance. Max power dissipation of 1.8W requires appropriate heat dissipation design.
This MOSFET is ideal for energy-efficient power management in electronic devices, automotive controls, and compact industrial circuits. It is well suited for applications requiring high voltage tolerance and efficient switching with minimal power loss.
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Frequently Asked Questions
The maximum continuous drain current for this model is 120mA, suitable for low power operations.
This MOSFET is rated for a maximum drain-source voltage of 600V, ensuring reliability in high voltage applications.
It features a low gate charge of 3.7nC, which supports efficient high-frequency switching.
The device is packaged in a compact 4-pin SOT-223 surface mount package, designed for space-saving on circuit boards.
It operates over a wide temperature range from -55°C to 150°C, making it suitable for both automotive and industrial environments.
The maximum power dissipation rating is 1.8W, which requires adequate thermal management to maintain performance.
Yes, this model is automotive qualified under the AEC-Q101 standard, ensuring its quality and reliability for automotive applications.
This model features an N-channel configuration, specifically designed for depletion mode operation.
The dimensions are 6.5mm in length, 3.5mm in width, and 1.6mm in height.
The maximum gate-source voltage is rated at -20V to +20V, allowing for a range of control voltages.
The forward voltage for this MOSFET is 1.2V, which is relevant for its operation in circuits.
This MOSFET is designed with Infineon's SIPMOS® technology, which enhances efficiency and reduces conduction losses.
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