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Infineon N-Channel MOSFET, 64 A, 250 V, Enhancement Mode, 3-Pin TO-263 Surface Mount IPB64N25S320ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.4mm |
| Length | 10mm |
| Model | IPB64N25S320ATMA1 |
| Width | 10.25mm |
| Mount Type | Surface |
| Series | IPB64N25S3-20 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 64A |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 20mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 67nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- The device features low 20mΩ on-resistance for efficient power management.
- Supports a maximum power dissipation of 300 W for robust thermal handling.
- Operates reliably from -55°C up to 175°C for harsh environment suitability.
- Enhancement mode configuration suits low-side switching and synchronous rectification.
- 3-pin TO-263 surface mount package enables low profile and easy PCB thermal integration.
- Gate voltage rating of 20 V and typical gate charge of 67 nC ensure stable switching.
- Ideal for automotive power modules, motor-drive inverters, and telecom power supplies.
Product Description
The Infineon IPB64N25S320ATMA1 is a high-performance N-channel MOSFET tailored for demanding power conversion and switching applications. It supports a maximum continuous drain current of 64 A and a drain source voltage of 250 V, making it suitable for automotive, industrial, and telecom electronics.
Featuring enhancement mode operation, it requires a positive gate voltage relative to the source for conduction. The device is housed in a 3-pin TO-263 surface mount package, providing low-profile mounting and excellent thermal dissipation via its large thermal pad.
This MOSFET delivers a low on-resistance of 20 milliohms, reducing conduction losses and improving efficiency in high-current circuits. It can safely dissipate up to 300 W of power, enabling sustained operation under heavy thermal load conditions.
Its operating temperature range from -55°C to 175°C ensures reliability in harsh environments and automotive electronics. The gate-source voltage is rated for a maximum of 20 V, with a typical gate charge of 67 nC, supporting precise and predictable switching performance.
Applications include automotive power conversion units, high-current DC-DC converters, motor drive inverter stages, as well as server and telecommunications power supplies. The robust thermal and electrical characteristics make it an excellent choice in high-temperature and high-reliability industrial environments.
The device offers 64 A maximum continuous drain current. Drain-source voltage rating is 250 V for high-voltage switching. 20 mΩ typical drain-source on-resistance reduces power losses. 300 W maximum power dissipation supports demanding thermal loads.
3-pin TO-263 package allows surface mounting with enhanced heat dissipation. Wide operating temperature from -55°C to 175°C suits harsh conditions. Enhancement mode N-Channel configuration for flexible power switching. Typical gate charge of 67 nC supports reliable switching performance.
Maximum gate-source voltage rating is 20 V for gate drive compatibility. Explore this Infineon MOSFET for power electronics, automotive, and industrial applications on EnvMart for reliable semiconductor components and detailed technical support.
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Frequently Asked Questions
The maximum continuous drain current for this model is 64 A.
This MOSFET has a maximum drain-source voltage rating of 250 V.
The typical drain-source on-resistance is 20 mΩ, which helps reduce conduction losses.
It supports a maximum power dissipation of 300 W, allowing for robust thermal handling.
The operating temperature range is from -55°C to 175°C, making it suitable for harsh environments.
It is housed in a 3-pin TO-263 surface mount package, which enables low-profile mounting and excellent thermal dissipation.
The maximum gate-source voltage rating is 20 V, ensuring compatibility with various gate drive circuits.
The typical gate charge is 67 nC, supporting stable and predictable switching performance.
This MOSFET complies with the AEC automotive standard, suitable for automotive applications.
The height of the package is 4.4 mm, and the width is 10.25 mm.
It is suitable for applications such as automotive power modules, motor-drive inverters, and telecom power supplies.
This model utilizes an N-channel configuration, which is ideal for low-side switching and synchronous rectification.
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