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Infineon N-Channel MOSFET, 176 A Continuous Drain Current, 100 V Drain Source Voltage, 2.5mΩ Rds(on), 375 W IPB020N10N5ATMA1

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Infineon N-Channel MOSFET, 176 A Continuous Drain Current, 100 V Drain Source Voltage, 2.5mΩ Rds(on), 375 W IPB020N10N5ATMA1

Name: Infineon N-Channel MOSFET, 176 A Continuous Drain Current, 100 V Drain Source Voltage, 2.5mΩ Rds(on), 375 W IPB020N10N5ATMA1
Brand: Infineon
SKU: 414796
Price: 4.52 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	4.57mm
Length	10.31mm
Model	IPB020N10N5ATMA1
Width	11.05mm
Mount Type	Surface
Series	IPB020N10N5
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	5
Channel Type	N
Maximum Continuous Drain Current Id	176A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	2.5mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	375W
Typical Gate Charge Qg @ Vgs	168nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	900mV

Key Features

This MOSFET features a low 2.5mΩ Rds(on) for efficient conduction loss reduction.
It supports a maximum power dissipation of 375 W for sustained high-power use.
The device operates reliably in a temperature range from -55°C to 175°C.
Five pins facilitate flexible circuit integration and thermal management.
The typical gate charge is 168 nC, optimizing turn-on and turn-off switching.
It tolerates gate-source voltages up to 20 V, enabling compatible gate driver selection.
Perfect for synchronous buck converters, motor drives, telecom rectifiers, and industrial inverter applications.

Product Description

Infineon IPB020N10N5ATMA1 is a high-current N-channel enhancement MOSFET designed for demanding thermal environments and surface-mount applications with a TO-263 package. It supports a maximum continuous drain current of 176 A and a drain-source voltage of 100 V, delivering superior performance with a low on-resistance of 2.5mΩ, which reduces conduction losses and improves energy efficiency.

This device features a typical gate charge of 168 nC and can tolerate gate-source voltages up to 20 V, optimizing gate drive control and ensuring robust switching performance. Its power dissipation reaches up to 375 W, allowing sustained operation in high-power circuits.

The MOSFET's wide operating temperature range, from -55°C to 175°C, ensures reliable functionality under harsh industrial conditions. The 5-pin TO-263 surface mount package supports automated assembly and effective heat sinking through copper PCB landings.

Applications include synchronous buck converter power stages, motor-drive half-bridge circuits, server power supplies, telecom rectifiers, battery management systems, industrial inverters, and traction auxiliary systems. Its design facilitates efficient heat dissipation and flexible circuit integration for optimized performance in demanding electronic and electrical environments.

Low 2.5mΩ drain-source on-resistance enhances energy efficiency. High 176 A current rating supports heavy-load switching applications. 375 W power dissipation allows for sustained high-power operating conditions. Operating temperature range of -55°C to 175°C supports harsh environment use.

Five pins allow for versatile circuit and thermal management implementations. Typical gate charge of 168 nC optimizes switching control. Maximum gate-source voltage rating of 20 V ensures compatibility with standard gate drivers.

Explore EnvMart's selection of high-quality Infineon MOSFETs and power components for industrial and commercial electronic systems.