Infineon Power N-Channel Enhancement Mode MOSFET 100 A 40 V Surface Mount SuperSO8 5 x 6 Package IAUC100N04S6L025ATMA1

Infineon IAUC100N04S6L025ATMA1 is a high-performance Power N-Channel MOSFET offering 100 A continuous drain current and 40 V maximum drain-source voltage. Packaged in a compact SuperSO8 5 x 6 mm surface mount format with 8 pins, this device supports enhancement mode operation ideal for automotive and industrial power management applications.

The MOSFET features a low drain-source resistance of 1.4 milliohms, contributing to high efficiency by minimizing conduction losses. It is capable of dissipating up to 81 W, supporting thermal endurance up to 175°C, making it suitable for demanding environments.

This model is fully qualified to AEC-Q101 automotive standards and is 100% avalanche tested ensuring ruggedness and reliability. It covers a wide operating temperature range from -55°C to 175°C, making it fit for harsh automotive conditions.

With a typical gate charge of 80 nC at the maximum gate-source voltage of 20 V, the MOSFET enables fast switching with minimal losses. Its forward voltage rating is 1.1 V, providing stable operation across applications.

This Infineon component complies with RoHS directives to ensure environmental safety and is classified as a green product. It is widely used in automotive electronics, power supply circuits, industrial motor drives, and other high current switching applications.

Choose the IAUC100N04S6L025ATMA1 for efficient power control and increased reliability in your electronic designs. Maximum continuous drain current of 100 A ensures high load handling capability. Maximum drain-source voltage of 40 V suitable for low voltage power switching.

Surface mount package type SuperSO8 5 x 6 mm with 8 pins for easy PCB integration. Enhancement mode channel with low on-resistance of 1.4 milliohms reduces power loss. High maximum power dissipation of 81 W supports demanding thermal conditions.

Operation temperature range from -55°C to 175°C for robust automotive use. Qualified to automotive standard AEC-Q101 ensuring reliability in harsh environments. Typical gate charge of 80 nC at 20 V gate-source voltage enables fast switching.

Forward voltage of 1.1 V and 100% avalanche tested for safety and performance assurance. Fully RoHS compliant and green product meeting environmental regulations. Explore similar power MOSFETs and related semiconductor products on EnvMart.