Infineon N-Channel MOSFET, 40 V, 381 A, 0.7 mΩ RDS(on), SuperSO8 5 x 6 mm Surface Mount BSC059N04LS6ATMA1

Infineon BSC059N04LS6ATMA1 N-Channel MOSFET is designed for high-current switching and power conversion applications, operating at a maximum drain-source voltage of 40 V with a continuous drain current rating of 381 A. Supplied in a compact SuperSO8 5 x 6 mm surface-mount package, this MOSFET is optimized for efficient thermal management and low conduction losses.

Featuring a low maximum drain-source resistance of 0.7 mΩ, the device minimizes power loss during heavy current loads, resulting in improved system efficiency. Typical gate charge of 80 nC at 10 V gate-to-source voltage facilitates rapid switching, making it suitable for high-speed and high-frequency applications.

The MOSFET is engineered for robust performance within a wide temperature range from -55 °C up to 175 °C, ideal for use in harsh thermal environments. It supports power dissipation up to 81 W, allowing sustained operation without thermal degradation.

Applications include high-current DC-DC converters, synchronous rectification in power supplies, motor driver circuits requiring high continuous current, battery protection, and compact power module designs. The device’s 8-pin package simplifies PCB assembly in space-constrained electronics setups.

Care should be taken to respect the maximum gate-to-source voltage of 20 V during gate drive design to avoid damage, while the device’s 1 V forward voltage drop contributes to efficient power distribution. The BSC059N04LS6ATMA1 meets RoHS environmental standards, making it suitable for use in compliant industrial and commercial products.

The MOSFET supports continuous drain current up to 381 A for heavy-current applications. It features a low 0.7 milliohm drain-source resistance, minimizing conduction losses. The device withstands a maximum drain-source voltage of 40 V suitable for medium-voltage switching.

Typical gate charge is 80 nC at 10 V gate-to-source voltage, enabling rapid switching control. With power dissipation rated at 81 W, it ensures reliable operation under sustained thermal loads. Operating temperature ranges from -55 °C to 175 °C, supporting demanding environments.

The MOSFET has an 8-pin SuperSO8 5 x 6 mm package for compact surface mounting. Maximum gate-to-source voltage rating is 20 V, allowing substantial gate-drive amplitude. Forward voltage drop is approximately 1 V at rated current, optimizing efficiency.

Conforms to RoHS standards ensuring compliance with environmental regulations. Explore our Electronics & Electricals section for more high-performance MOSFETs and power semiconductors to meet your industrial and manufacturing needs.