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Infineon ISP Type P-Channel MOSFET, 1.7 A, 60 V Enhancement Mode, 3-Pin SOT-223 ISP75DP06LMXTSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model ISP75DP06LMXTSA1
Mount Type Surface
Series ISP
Maximum Operating Temperature 175°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 1.7A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 1.7mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.1V

Key Features

  • This MOSFET supports a maximum continuous drain current of 1.7 A.
  • It features a maximum drain-source voltage of 60 V suitable for various electronic applications.
  • Utilizes an enhancement mode channel for efficient switching performance.
  • Equipped with a low drain-source resistance of 1.7 mΩ for reduced power loss.
  • Package type is SOT-223, enabling surface mount technology compatibility.
  • Maximum power dissipation capability is 81 W for robust operation.
  • Can operate safely from a minimum temperature of -55°C to a maximum of 175°C.
  • Automotive standard compliant with AEC-Q101 ensuring reliability in automotive systems.

Product Description

Infineon ISP75DP06LMXTSA1 is a P-Channel MOSFET designed for efficient power switching and amplification in compact electronic circuits. Featuring a maximum continuous drain current of 1.7 A and a drain-source voltage rating of 60 V, this enhancement mode transistor operates reliably within a broad temperature range from -55°C to 175°C. The device is housed in a three-pin SOT-223 package, optimized for surface mount technology, supporting easy integration into modern PCB designs.

This P-Channel MOSFET exhibits an exceptionally low drain-source resistance of 1.7 mΩ, minimizing power losses and heat generation during conduction. The maximum power dissipation is rated at 81 W, making it suitable for demanding electronic applications including automotive and industrial power management systems. Compliance with the AEC-Q101 automotive standard underscores its reliability and quality assurance for vehicle electronics.

The typical gate charge of 80 nC at gate-source voltage enables fast switching transitions, enhancing performance in high-frequency circuits. The device maintains a forward voltage of 1.1 V, contributing to efficient current flow when in the on state.

This MOSFET supports a maximum continuous drain current of 1.7 A. Maximum drain-source voltage is rated at 60 V. Features low on-resistance at 1.7 mΩ for minimal conduction loss. Encapsulated in a 3-pin SOT-223 surface mount package for easy PCB integration.

Rated maximum power dissipation of 81 W for high reliability. Operates over a wide temperature range from -55°C to 175°C. Enhanced switching speed with typical gate charge of 80 nC. Automotive qualified with AEC-Q101 certification for stringent applications.

Forward voltage of 1.1 V supports efficient conduction.

This Infineon MOSFET is ideal for electronic components, power and connectors, discrete semiconductor switching devices, automotive electronics, industrial controls, and other electronic circuit designs requiring reliable P-Channel transistors. Browse more MOSFET products like this at EnvMart for comprehensive industrial and electronics component solutions.

Infineon ISP Type P-Channel MOSFET, 1.7 A, 60 V Enhancement Mode, 3-Pin SOT-223 ISP75DP06LMXTSA1
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Frequently Asked Questions

The maximum continuous drain current of this model is 1.7 A.

This MOSFET has a maximum drain-source voltage rating of 60 V.

It has a maximum power dissipation capability of 81 W.

The device operates safely within a temperature range of -55°C to 175°C.

It is housed in a 3-pin SOT-223 package, suitable for surface mount technology.

The typical gate charge at gate-source voltage is 80 nC.

The forward voltage of this MOSFET is 1.1 V.

It complies with the AEC-Q101 automotive standard.

This model features a P-Channel type channel.

The maximum gate-source voltage is rated at 20 V.

The maximum drain-source resistance is 1.7 mΩ.

Yes, it is RoHS compliant.

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