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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | ISP75DP06LMXTSA1 |
| Mount Type | Surface |
| Series | ISP |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.7A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Infineon ISP75DP06LMXTSA1 is a P-Channel MOSFET designed for efficient power switching and amplification in compact electronic circuits. Featuring a maximum continuous drain current of 1.7 A and a drain-source voltage rating of 60 V, this enhancement mode transistor operates reliably within a broad temperature range from -55°C to 175°C. The device is housed in a three-pin SOT-223 package, optimized for surface mount technology, supporting easy integration into modern PCB designs.
This P-Channel MOSFET exhibits an exceptionally low drain-source resistance of 1.7 mΩ, minimizing power losses and heat generation during conduction. The maximum power dissipation is rated at 81 W, making it suitable for demanding electronic applications including automotive and industrial power management systems. Compliance with the AEC-Q101 automotive standard underscores its reliability and quality assurance for vehicle electronics.
The typical gate charge of 80 nC at gate-source voltage enables fast switching transitions, enhancing performance in high-frequency circuits. The device maintains a forward voltage of 1.1 V, contributing to efficient current flow when in the on state.
This MOSFET supports a maximum continuous drain current of 1.7 A. Maximum drain-source voltage is rated at 60 V. Features low on-resistance at 1.7 mΩ for minimal conduction loss. Encapsulated in a 3-pin SOT-223 surface mount package for easy PCB integration.
Rated maximum power dissipation of 81 W for high reliability. Operates over a wide temperature range from -55°C to 175°C. Enhanced switching speed with typical gate charge of 80 nC. Automotive qualified with AEC-Q101 certification for stringent applications.
Forward voltage of 1.1 V supports efficient conduction.
This Infineon MOSFET is ideal for electronic components, power and connectors, discrete semiconductor switching devices, automotive electronics, industrial controls, and other electronic circuit designs requiring reliable P-Channel transistors. Browse more MOSFET products like this at EnvMart for comprehensive industrial and electronics component solutions.
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