Infineon iPB Type P-Channel MOSFET, 273 A Drain Current, 100 V Drain-Source Voltage, 3-Pin TO-263 Surface IPB110P06LMATMA1

Infineon IPB110P06LMATMA1 is a P-Channel MOSFET specially engineered for demanding power conversion and switching tasks requiring high current and voltage handling capacity. This semiconductor device is housed in a compact TO-263 surface mount package, making it suitable for industrial electronics, power supplies, and automotive applications.

With a maximum continuous drain current of 273 A and a drain-source voltage rating of 100 V, it can manage substantial electrical loads efficiently. Its very low drain-source resistance of 1.7 milliohms ensures minimal conduction losses, contributing to higher performance and thermal management effectiveness.

The MOSFET supports robust power dissipation up to 81 W and functions reliably across a wide temperature operating range from -55°C up to 175°C. This thermal tolerance makes it compatible with harsh environments and transient load conditions encountered in industrial and automotive electronics.

Featuring a typical gate charge of 80 nC at specified gate voltage, it enables responsive switching cycles which are critical for efficient power management circuits like synchronous rectifiers and DC-DC converters. The device must be operated within a gate-to-source voltage limit of ±20 V to ensure gate structure protection.

Applications include power supply synchronous rectification, motor-drive downstream stages, high-voltage DC-DC converters, and compact surface-mount power modules. The TO-263 package optimizes PCB footprint and thermal dissipation with suitable heat sinking measures.

Designed for high-current and high-voltage switching applications. Very low on-resistance reduces conduction losses for improved efficiency. Supports robust thermal dissipation up to 81 W for reliable operation. Operates in a wide temperature range from -55°C to 175°C.

Typical gate charge of 80 nC allows responsive switching performance. Suitable for synchronous rectification, motor drive circuits, and DC-DC converters. Compliant with RoHS standards to minimize hazardous substances. Compact TO-263 format enables easy surface mounting and effective heat management.

Maximum gate to source voltage tolerance of ±20 V safeguards gate integrity.

Explore the Infineon MOSFET range at EnvMart for high-performance discrete semiconductors suitable for advanced power electronics, industrial machinery, and automotive electrical systems.