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Infineon iPB Series N-Channel MOSFET 273 A Continuous Drain Current, 100 V Drain Source Voltage, 81 W Power IPB017N10N5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPB017N10N5ATMA1 |
| Mount Type | Surface |
| Series | iPB |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 7 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 273A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Low on-resistance minimizes conduction losses and improves efficiency.
- High continuous drain current supports sustained heavy-load operation.
- TO-263 surface-mount package allows efficient thermal management and compact mounting.
- Typical gate charge of 80 nC enables responsive switching performance.
- Maximum gate voltage rating of 20 V provides flexible gate drive options.
- Wide operating temperature range from -55°C to 175°C for industrial applications.
- Power dissipation capacity of 81 W for handling higher power throughput.
- Designed for DC-DC converters, synchronous rectification, motor drives, and telecom power rails.
Product Description
Infineon IPB017N10N5ATMA1 is a high-current N-Channel MOSFET featuring a robust TO-263 surface-mount package that provides excellent thermal conduction paths for heatsinking. It supports a maximum continuous drain current of 273 A and a maximum drain-source voltage of 100 V, making it suitable for demanding industrial and power conversion environments.
This MOSFET offers low on-resistance of 1.7 mΩ, which reduces conduction losses and enhances overall efficiency in power applications. It has a typical gate charge of 80 nC at the gate-source voltage, ensuring fast switching responses, and a maximum gate-source voltage rating of 20 V that allows broad gate drive voltage flexibility.
Its design supports continuous power dissipation of 81 W and can operate reliably in a temperature range from -55°C up to 175°C, fitting wide industrial temperature requirements.
Applications include high-current DC-DC power converters, synchronous rectification in power supplies, motor-drive half-bridge stages, server and telecom power rails, as well as battery management and inverter systems.
Low on-resistance minimizes conduction losses and improves efficiency. High continuous drain current supports sustained heavy-load operation. TO-263 package optimizes surface-mount, low thermal resistance heatsinking. Typical gate charge of 80 nC offers responsive switching capability.
20 V maximum gate voltage rating allows flexible gate drive voltages. Wide operating temperature range from -55°C to 175°C for industrial use. Power dissipation of 81 W supports high power throughput. RoHS compliant for environmental safety.
This power MOSFET from Infineon's iPB series is tailored for industrial, manufacturing, electrical, and power electronics environments requiring high current handling and thermal reliability. Its robust construction and electrical characteristics make it a reliable choice for engineers designing advanced power supply and motor control systems.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 273 A.
The maximum drain-source voltage for this model is 100 V.
It has a power dissipation capacity of 81 W.
The typical gate charge is 80 nC at the gate-source voltage.
This model operates within a temperature range from -55°C to 175°C.
The on-resistance is 1.7 mΩ, which helps reduce conduction losses.
It uses a TO-263 surface-mount package.
The maximum gate-source voltage rating is 20 V.
This model has 7 pins.
Yes, it is RoHS compliant, ensuring environmental safety.
It is designed for applications such as DC-DC converters, synchronous rectification, and motor drives.
This MOSFET features an N-channel configuration.
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