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Infineon N-Channel MOSFET, 120 A, 40 V, Enhancement Mode, 8-Pin SuperSO8 5x6 Package IAUC100N10S5L040ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IAUC100N10S5L040ATMA1 |
| Mount Type | Surface |
| Series | IAUC |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- This MOSFET is designed in an 8-pin SuperSO8 package measuring 5 x 6 mm for surface mounting.
- The device operates in enhancement mode, ensuring efficient switching performance.
- Maximum power dissipation is rated at 81 W, supporting high power handling capability.
- The transistor features a low maximum drain-source resistance of 1.4 milliohms for minimal conduction losses.
- Operating temperature range spans from -55°C minimum to 175°C maximum, suitable for demanding environments.
- Maximum gate-source voltage is 20 V, with a typical gate charge of 80 nC at Vgs.
- Forward voltage is specified at 1.1 V, contributing to switching efficiency.
- The product is AEC-Q101 automotive qualified and RoHS compliant.
Product Description
The Infineon IAUC100N10S5L040ATMA1 is a robust N-Channel MOSFET designed for high-efficiency power switching applications. Featuring a maximum continuous drain current of 120 A and a maximum drain-source voltage of 40 V, it excels in demanding electronic circuits requiring fast switching and thermal performance.
Housed in an 8-pin SuperSO8 surface-mount package measuring 5 x 6 mm, this device incorporates enhancement mode operation and a low maximum on-resistance of 1.4 milliohms to minimize conduction losses. It supports a maximum power dissipation of up to 81 W, making it ideal for power management tasks in industrial and automotive environments.
With an operating temperature range from -55°C to 175°C and compliance with AEC-Q101 automotive standards, the IAUC100N10S5L040ATMA1 offers reliability under harsh environmental conditions. The maximum gate-source voltage rating of 20 V and typical gate charge of 80 nC at Vgs provide fast and efficient switching characteristics.
This MOSFET is suitable for use in power electronics, industrial automation systems, automotive circuits, and other applications requiring high current and voltage handling capabilities.
Key advantages include low on-resistance, high current capacity, and automotive-grade qualification for reliability. Its surface-mount SuperSO8 package allows for space-saving PCB designs and automated assembly. The device also complies with RoHS environmental standards, ensuring it meets regulations for hazardous substances.
It is 100% avalanche tested, increasing its robustness against transient voltage spikes.
Infineon's IAUC series MOSFETs are engineered to provide reliable and efficient performance in power management and switching applications across industrial, automotive, and consumer electronics sectors. Utilize this device for optimized energy efficiency and system reliability in high-current switching environments.
Browse the Electronics & Electricals category on EnvMart for a wide selection of MOSFETs and power semiconductors from leading manufacturers like Infineon.
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Frequently Asked Questions
The maximum continuous drain current of this model is 120 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
It is housed in an 8-pin SuperSO8 package measuring 5 x 6 mm.
The maximum power dissipation is rated at 81 W.
The operating temperature range spans from -55°C to 175°C.
The maximum gate-source voltage for this model is 20 V.
The typical gate charge at Vgs is 80 nC.
The maximum drain-source resistance is 1.4 milliohms.
Yes, it is AEC-Q101 automotive qualified.
This MOSFET is RoHS compliant, ensuring it meets regulations for hazardous substances.
This model features an N-channel configuration and operates in enhancement mode.
It is suitable for power electronics, industrial automation systems, and automotive circuits requiring high current and voltage handling capabilities.
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