Infineon BSZ Series N-Channel MOSFET 40 V, 212 A, TSDSON-8 FL Package BSZ0500NSIATMA1

Infineon BSZ0500NSIATMA1 is an advanced N-Channel MOSFET belonging to the BSZ series, optimized specifically for use in high-performance buck converters and power electronics applications. This device supports a continuous drain current of up to 212 A and a maximum drain-source voltage of 40 V. It is housed in a compact TSDSON-8 FL surface-mount package with 8 pins, designed to deliver excellent thermal efficiency and ease of PCB integration.

The MOSFET integrates a monolithic Schottky-like diode that significantly reduces switching losses and enhances overall efficiency. Its very low on-resistance of 0.7 milliohms makes it suitable for applications requiring efficient power management and thermal performance. Typical gate charge is optimized at 80 nC for fast switching speeds, adhering to the demands of modern power conversion designs.

With a maximum power dissipation rating of 81 W, this device can operate reliably across a wide temperature range from -55°C to 175°C. Its maximum gate-source voltage is rated at ±20 V, providing robustness against voltage spikes and ensuring device reliability. The forward voltage of 1 V facilitates low conduction losses during operation.

The device is suitable for industrial, automotive (non-automotive standard), and consumer electronics power management systems.

This BSZ0500NSIATMA1 MOSFET package includes an 8-pin TSDSON-8 FL footprint designed for surface mounting, enabling compact PCB designs. It is ideal for engineers engaged in designing power-supply circuits, DC/DC converters, and other efficient high-current switching applications.

Explore EnvMart’s Electronics & Electricals category to find more high-quality MOSFETs and semiconductor components suitable for your industrial and laboratory needs. Features a monolithically integrated Schottky-like diode for improved efficiency.

Boasts very low on-resistance with a maximum drain-source resistance of 0.7 milliohms. Typical gate charge of 80 nC ensures fast switching performance. Designed for surface mount with 8 pins in a compact thermal enhanced TSDSON-8 FL package.

Supports a maximum power dissipation of 81 W with operational temperature range from -55°C up to 175°C. Maximum gate-source voltage rating of ±20 V for robust gate control. Forward voltage is 1 V, suitable for efficient power applications.

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