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Infineon BSC Series N-Channel MOSFET 381 A Continuous Drain Current 40 V Drain Source Voltage TDSON 8-Pin BSC034N06NSATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC034N06NSATMA1 |
| Mount Type | Surface |
| Series | BSC |
| Maximum Operating Temperature | +150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Very low on-resistance of 0.7 milliohms minimizes conduction losses during operation.
- Maximum power dissipation rating of 81 watts supports sustained thermal performance.
- Operates over a wide temperature range from -55°C to +150°C, suitable for harsh industrial environments.
- Typical gate charge of 80 nanocoulombs enables efficient and fast switching control.
- Maximum gate-to-source voltage rating is 20 V to ensure safe operation without gate overstress.
- Forward voltage of 1.2 V reduces voltage drop during conduction, enhancing efficiency.
- Application ideal for DC-DC converters, motor drive stages, power management in servers, and synchronous rectification in power supplies.
- Designed for surface-mount assembly with an 8-pin configuration for reliable PCB integration.
Product Description
Infineon BSC034N06NSATMA1 is a high-current N-channel MOSFET designed to provide robust power switching with a maximum drain current of 381 A and drain source voltage rating of 40 V. Packaged in an 8-pin TDSON surface-mount configuration, this device features very low on-resistance (0.7 mΩ) ensuring minimal conduction losses during operation.
It supports a maximum power dissipation of 81 W, allowing it to handle substantial thermal loads efficiently. The MOSFET operates reliably across a broad temperature range from -55°C to +150°C, making it suitable for demanding industrial, automotive, and commercial applications.
The typical gate charge of 80 nC at 8 V gate-to-source voltage allows for efficient switching performance, while the maximum gate-source voltage of 20 V protects the gate from overstress. The forward voltage of 1.2 V reduces power loss and improves overall efficiency during operation.
This device is ideally applied in DC-DC converter circuits requiring high current capabilities, motor drive stages in industrial equipment, power management modules in server and rack systems, and synchronous rectification in power supplies for improved power efficiency.
Very low Rds(on) for reduced conduction losses. High current handling capacity suitable for heavy loads. Wide operational temperature range for harsh environments. Efficient switching enabled by low typical gate charge. Safe gate voltage ratings prevent overstress.
Compact 8-pin TDSON surface mount package. Ideal for industrial, automotive, and commercial power applications.
This high-performance MOSFET is part of Infineon's BSC series, known for reliability and industry compliance including RoHS standards. It supports critical electronic requirements in various sectors including industrial automation, power supply design, and advanced motor control.
Explore more Infineon semiconductor solutions and MOSFET variants in the EnvMart catalog to find the best fit for your electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 381 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
The typical gate charge at 8 V gate-to-source voltage is 80 nC.
It features a very low on-resistance of 0.7 mΩ, minimizing conduction losses during operation.
The maximum power dissipation rating for this unit is 81 W, supporting sustained thermal performance.
It operates over a wide temperature range from -55°C to +150°C, making it suitable for harsh environments.
This model is packaged in an 8-pin TDSON surface-mount configuration for reliable PCB integration.
The maximum gate-to-source voltage rating for this MOSFET is 20 V, which helps prevent gate overstress.
The forward voltage of this MOSFET is 1.2 V, which reduces voltage drop during conduction.
It is ideal for applications such as DC-DC converters, motor drive stages, and power management in servers.
This device complies with RoHS standards, ensuring it meets environmental regulations.
This model has a pin count of 8, suitable for surface-mount assembly.
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