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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC146N10LS5ATMA1 |
| Mount Type | Surface |
| Series | BSC |
| Maximum Operating Temperature | +150°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Infineon BSC146N10LS5ATMA1 is a high-performance N-Channel MOSFET engineered for power electronic circuits requiring robust current switching and conduction capabilities. This discrete semiconductor features a maximum continuous drain current (Id) of 381 A and a maximum drain-source voltage (Vds) of 40 V. Packaged in an 8-pin SuperSO8 5 x 6 mm surface-mount format, it supports high power dissipation up to 81 W, enabling sustained operation under demanding load conditions.
The device operates efficiently with a low drain-source resistance (Rds(on)) of 0.7 mΩ, reducing conduction losses and improving overall system performance. Its typical gate charge of 80 nC balances switching speed and drive requirements, while the 20 V maximum gate-source voltage rating offers protection against voltage spikes common in power switching applications.
Rated for a wide operating temperature range from -55°C to +150°C, this MOSFET is suitable for use in harsh thermal environments often encountered in industrial, automotive, and commercial electronics. The SuperSO8 package facilitates automated assembly on compact power boards, ensuring compatibility with modern production processes.
Supports high continuous drain current of 381 A for heavy current loads. Low Rds(on) of 0.7 mΩ enhances efficiency by minimizing conduction losses. 81 W maximum power dissipation enables sustained power handling. Wide operating temperature range from -55°C to +150°C provides reliability in harsh conditions.
Gate charge of 80 nC balances switching speed and drive current. Gate-source voltage tolerance of 20 V offers drive signal protection. Compact 8-pin SuperSO8 5 x 6 mm surface-mount package supports automated PCB assembly.
Typical forward voltage of 1.1 V during conduction maintains efficiency. RoHS compliant, making it suitable for environmentally conscious designs.
This MOSFET is well-suited for applications such as high-current DC-DC converters in power racks, motor driver circuits requiring sustained current delivery, parallel switching configurations in server power distribution, and load switching in industrial power modules.
The Infineon BSC146N10LS5ATMA1 is a reliable component for high-performance power electronic designs requiring durability, efficiency, and regulatory compliance.
Explore more in the Electronics & Electricals category for semiconductors and MOSFET components suitable for industrial, laboratory, HVAC, manufacturing, and commercial applications at EnvMart.
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