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Infineon N-Channel MOSFET 381 A Continuous Drain Current 40 V Drain-Source Voltage 81 W Power Dissipation BSC146N10LS5ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model BSC146N10LS5ATMA1
Mount Type Surface
Series BSC
Maximum Operating Temperature +150°C
Package Type SuperSO8 5 x 6
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 381A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 0.7mΩ
Channel Mode N
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.1V

Key Features

  • Supports high continuous drain current of up to 381 A for demanding power applications.
  • Features a low drain-source resistance Rds(on) of 0.7 mΩ to minimize conduction losses.
  • Maximum power dissipation rating of 81 W for sustained performance under load.
  • Operates across a wide temperature range from -55°C to +150°C ensuring reliability in harsh environments.
  • Gate charge of 80 nC and gate-source voltage tolerance of 20 V allow efficient switching and drive robustness.
  • Compact surface-mount SuperSO8 5 x 6 mm package suitable for automated PCB assembly.
  • Forward voltage during conduction is typically 1.1 V for efficient load handling.
  • Compliant with RoHS standards for environmental safety.

Product Description

Infineon BSC146N10LS5ATMA1 is a high-performance N-Channel MOSFET engineered for power electronic circuits requiring robust current switching and conduction capabilities. This discrete semiconductor features a maximum continuous drain current (Id) of 381 A and a maximum drain-source voltage (Vds) of 40 V. Packaged in an 8-pin SuperSO8 5 x 6 mm surface-mount format, it supports high power dissipation up to 81 W, enabling sustained operation under demanding load conditions.

The device operates efficiently with a low drain-source resistance (Rds(on)) of 0.7 mΩ, reducing conduction losses and improving overall system performance. Its typical gate charge of 80 nC balances switching speed and drive requirements, while the 20 V maximum gate-source voltage rating offers protection against voltage spikes common in power switching applications.

Rated for a wide operating temperature range from -55°C to +150°C, this MOSFET is suitable for use in harsh thermal environments often encountered in industrial, automotive, and commercial electronics. The SuperSO8 package facilitates automated assembly on compact power boards, ensuring compatibility with modern production processes.

Supports high continuous drain current of 381 A for heavy current loads. Low Rds(on) of 0.7 mΩ enhances efficiency by minimizing conduction losses. 81 W maximum power dissipation enables sustained power handling. Wide operating temperature range from -55°C to +150°C provides reliability in harsh conditions.

Gate charge of 80 nC balances switching speed and drive current. Gate-source voltage tolerance of 20 V offers drive signal protection. Compact 8-pin SuperSO8 5 x 6 mm surface-mount package supports automated PCB assembly.

Typical forward voltage of 1.1 V during conduction maintains efficiency. RoHS compliant, making it suitable for environmentally conscious designs.

This MOSFET is well-suited for applications such as high-current DC-DC converters in power racks, motor driver circuits requiring sustained current delivery, parallel switching configurations in server power distribution, and load switching in industrial power modules.

The Infineon BSC146N10LS5ATMA1 is a reliable component for high-performance power electronic designs requiring durability, efficiency, and regulatory compliance.

Explore more in the Electronics & Electricals category for semiconductors and MOSFET components suitable for industrial, laboratory, HVAC, manufacturing, and commercial applications at EnvMart.

Infineon N-Channel MOSFET 381 A Continuous Drain Current 40 V Drain-Source Voltage 81 W Power Dissipation BSC146N10LS5ATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 381 A, making it suitable for heavy current loads in power applications.

This MOSFET has a maximum drain-source voltage rating of 40 V, which allows it to operate effectively in various power electronic circuits.

It can handle a maximum power dissipation of 81 W, enabling sustained performance under load conditions.

The device features a low drain-source resistance (Rds(on)) of 0.7 mΩ, which minimizes conduction losses and enhances efficiency.

This MOSFET operates across a wide temperature range from -55°C to +150°C, ensuring reliability in harsh environments.

The typical gate charge for this model is 80 nC, balancing switching speed and drive requirements effectively.

It has a maximum gate-source voltage tolerance of 20 V, providing protection against voltage spikes in power switching applications.

The device is packaged in an 8-pin SuperSO8 5 x 6 mm surface-mount format, suitable for automated PCB assembly.

The typical forward voltage during conduction is 1.1 V, which helps maintain efficiency in load handling.

Yes, it is compliant with RoHS standards, making it suitable for environmentally conscious designs.

This model is well-suited for applications such as high-current DC-DC converters, motor driver circuits, and load switching in industrial power modules.

The country of origin for this MOSFET is India.

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