ams OSRAM Infrared Phototransistor SMT SIDELED Package SFH 325 FA

ams OSRAM SFH 325 FA Infrared Phototransistor SMT SIDELED Package is a silicon NPN phototransistor housed in a compact SMT SIDELED package. It is engineered for use in various electronic equipment including gesture recognition systems and personal computers, providing reliable infrared light detection with superior linearity.

The phototransistor offers rapid response times with typical rise and fall times of 7 microseconds, enabling precise signal detection. Its maximum collector current of 15mA and maximum light current of 80μA support efficient photodetection. It functions effectively over a wide temperature range from -40°C to 100°C, ensuring robust performance even under extreme environmental conditions.

Featuring a maximum collector-emitter voltage of 35 volts, the SFH 325 FA is designed to withstand electrical stress. The device’s black epoxy package provides ESD protection rated at 2 kV, adhering to ANSI/ESDA/JEDEC JS-001 standards, protecting the device against electrostatic discharges.

This phototransistor is suitable for applications requiring infrared light detection such as electronic equipment interfaces and gesture recognition technology. It is RoHS compliant, ensuring it meets environmental standards for hazardous substances.

Compact SMT SIDELED package facilitates surface mounting on PCBs. Infrared spectrum detection with high linearity and fast switching characteristics. ESD protection of 2 kV enhances device reliability. Wide operating temperature range from -40°C to 100°C.

Maximum collector current of 15mA supports efficient operation. Powerful maximum collector-emitter voltage rating of 35V provides electrical robustness. Ideal for consumer and industrial electronics requiring infrared photodetection.

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