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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.4mm |
| Length | 3.8mm |
| Model | ISC058N04NM5ATMA1 |
| Width | 1.1mm |
| Mount Type | Surface |
| Series | ISC |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON-8 FL |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 63A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 5.8mΩ |
| Maximum Power Dissipation Pd | 42W |
| Typical Gate Charge Qg @ Vgs | 16nC |
| Maximum Gate Source Voltage Vgs | 20V |
Infineon ISC058N04NM5ATMA1 is a high-performance N-channel MOSFET power transistor designed for a wide range of industrial and electronic applications. It features a drain source voltage of 40 V and can handle a maximum continuous drain current of 63 A, making it suitable for demanding power management tasks. Packaged in a compact TDSON-8 FL 8-pin surface-mount format, this device offers excellent thermal resistance and low gate charge of 16 nC, enabling efficient switching and reduced power losses.
This MOSFET excels in battery powered applications, LV motor drives, and other environments where reliability and performance under thermal stress are critical. Its high threshold voltage provides immunity against false turn-on in noisy electronic conditions, while its 100% avalanche testing guarantees device robustness during transient events.
The device dimensions of 3.8 mm length, 4.4 mm height, and 1.1 mm width support compact PCB layouts. It operates safely within a wide temperature range from -55°C to 175°C and supports a maximum gate-source voltage of 20 V, adding to its adaptability for various power electronics systems.
Additional environmental compliance includes being halogen-free per IEC61249-2-21 and RoHS conformant, aligning with industry standards for sustainable electronics manufacturing.
This Infineon MOSFET is an optimal choice for industrial electronics, automotive systems, manufacturing equipment, and consumer electronics requiring efficient high-current switching solutions.
Provides low Rds(on) of 5.8 mΩ, ensuring efficient conduction. Operates reliably within -55°C to 175°C temperature range. Features a maximum gate-source voltage of 20 V for safe switching. Compact dimensions: 3.8 mm length, 4.4 mm height, and 1.1 mm width.
Designed for surface mount applications with 8-pin configuration. 100% avalanche tested to ensure robustness and reliability. Halogen-free and RoHS compliant, suitable for environmental standards. Ideal for battery powered applications and low voltage motor drives.
Explore more semiconductor products and discover additional MOSFETs at EnvMart for your industrial and electronic component needs.
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