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Infineon ISC N-Channel MOSFET, 170 A, 40 V, 8-Pin TDSON-8 FL ISC019N04NM5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 3.8mm |
| Length | 4.4mm |
| Model | ISC019N04NM5ATMA1 |
| Width | 1.1mm |
| Mount Type | Surface |
| Series | ISC |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON-8 FL |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 170A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Maximum Power Dissipation Pd | 115W |
| Typical Gate Charge Qg @ Vgs | 67nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Designed for high efficiency with low Rds(on) of 1.7 milliohms.
- Maximum power dissipation of 115 watts for robust performance.
- Operates reliably from -55°C up to 175°C junction temperature.
- Low typical gate charge of 67 nC reduces switching losses.
- Surface mount package suitable for compact electronic designs.
- Built with high threshold voltage for immunity against false turn-on in noisy environments.
- Fully avalanche tested to ensure device robustness.
- Lead-free and RoHS compliant for environmental safety.
Product Description
Infineon ISC019N04NM5ATMA1 is a high-performance N-Channel MOSFET designed for demanding industrial and electronic applications requiring a continuous drain current of 170 A and voltage rating of 40 V. This MOSFET features an 8-pin TDSON-8 FL surface mount package measuring 4.4 mm length, 3.8 mm height, and 1.1 mm width, making it suitable for compact PCBs with limited space.
The device exhibits a maximum drain source resistance (Rds) of only 1.7 milliohms, enabling very low on-resistance to minimize conduction losses. Its typical gate charge of 67 nC at 6 V reduces switching losses, increasing efficiency in power conversion circuits. Infineon’s OptiMOS 5 technology allows operation at elevated junction temperatures up to 175°C, benefiting applications where thermal management is critical.
This MOSFET is 100% avalanche tested, enhancing reliability and robustness for automotive and industrial use cases, including battery-powered applications and low-voltage motor drives. Its high threshold voltage prevents false activation from electrical noise, safeguarding system stability.
Offers a robust continuous drain current capacity of 170 A and maximum voltage of 40 V. Compact TDSON-8 FL package for surface mounting optimizes space utilization. High thermal resistance and low gate charge improve device efficiency and reliability.
Lead-free plating and compliance with RoHS and halogen-free standards ensure environmental compatibility. Suitable for industrial, automotive, motor drive, power management, and battery-powered applications. Operates safely within a wide temperature range from -55°C to 175°C junction temperature.
Protected against unwanted turn-on effects through high threshold voltage design.
This Infineon MOSFET is ideal for electronic designers seeking a reliable, high-current switching transistor for power conversion and control in industrial, automotive, and lighting applications. Explore our wide range of semiconductor devices and power electronics components for your next project on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 170 A.
This MOSFET has a maximum voltage rating of 40 V.
The maximum drain source resistance (Rds) is 1.7 milliohms, which minimizes conduction losses.
The typical gate charge for this model is 67 nC at a gate-source voltage of 6 V.
The dimensions of the TDSON-8 FL package are 4.4 mm in length, 3.8 mm in height, and 1.1 mm in width.
It operates reliably within a temperature range of -55°C to 175°C.
This MOSFET is designed for surface mounting.
Yes, it is lead-free and RoHS compliant, ensuring environmental safety.
This MOSFET is suitable for industrial, automotive, motor drive, power management, and battery-powered applications.
The maximum power dissipation for this model is 115 watts.
It is 100% avalanche tested, enhancing reliability and robustness for various applications.
The maximum gate-source voltage (Vgs) is 20 V.
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