Infineon CoolSiC N-Channel MOSFET, 46 A, 650 V Enhancement Mode, 3-Pin TO-247 IMW65R039M1HXKSA1

Infineon IMW65R039M1HXKSA1 is a high-performance CoolSiC N-Channel MOSFET with a 3-pin TO-247 package, designed for industrial and electronic applications requiring efficient power switching and durability.

This device delivers a maximum continuous drain current of 46 amperes and is rated for a maximum drain-source voltage of 650 volts. Featuring enhancement mode channel operation, it is optimized using silicon carbide trench technology, enabling low conduction losses, excellent thermal performance, and robust avalanche capabilities.

The MOSFET exhibits low drain-source resistance of 50 milliohms, contributing to improved efficiency and reduced heat generation. Its construction ensures low capacitances and optimal switching behavior under high current conditions, making it suitable for power conversion, motor control, and industrial power supply applications.

The device is designed for through-hole mounting, with a 3-pin TO-247 package facilitating easy integration in various electronic assemblies. It is compatible with standard gate drivers, simplifying system design and implementation.

Typical industrial uses include power management in manufacturing systems, electric vehicle inverters, industrial HVAC systems, and renewable energy converters where high efficiency and reliability are critical.

Features a 3-pin TO-247 package for reliable mounting. CoolSiC technology enabling high efficiency and robustness. 46 A continuous drain current with 650 V voltage rating. Low drain-source resistance of 50 mΩ. Optimized low capacitance and switching performance.

Excellent thermal behavior and avalanche capability. Compatible with standard gate drivers. Ideal for industrial power electronics and control systems. Explore more Infineon electronic components and discrete semiconductors at EnvMart for reliable power management solutions.