Infineon N-Channel Power MOSFET, 32 A, 80 V, 3-Pin TO-220, Through Hole Mount IPP019N08NF2SAKMA1

Infineon IPP019N08NF2SAKMA1 is a high-performance N-channel power MOSFET designed for applications requiring efficient switching and high current capacity. It features a maximum continuous drain current of 32 A and a maximum drain-source voltage rating of 80 V. The device is housed in a standard 3-pin TO-220 package with a through-hole mount, allowing for easy integration into power circuits.

This MOSFET excels in industrial, automotive, and commercial electronics where low on-resistance and high power dissipation capabilities are critical. The maximum drain-source resistance of 1.9 milliohms ensures minimal conduction losses, while the typical gate charge of 124 nC at 20 V gate-source voltage helps achieve faster switching with lower power consumption. Its broad operating temperature range from -55°C to 175°C supports robust operation in harsh environments.

With a maximum power dissipation rating of 250 W, this component is suitable for use in power supplies, motor drivers, and inverter circuits. The device undergoes 100% avalanche testing to assure durability and prevent failure under inductive switching conditions.

The compact TO-220 package with dimensions of approximately 10.36 mm in length, 9.45 mm in height, and 4.57 mm in width aids in heat dissipation and mechanical stability. Its forward voltage drop is a low 1.2 V, promoting efficient current conduction.

Overall, the Infineon IPP019N08NF2SAKMA1 MOSFET provides reliable, high-performance switching capability for a wide range of demanding electrical and electronic applications. This MOSFET features a 3-pin through hole mount design suitable for various power applications.

Maximum drain-source resistance of 1.9 milliohms enhances efficiency. Capable of dissipating up to 250 W power, allowing high power handling. Operating temperature ranges from -55°C to a maximum of 175°C for reliable performance.

Typical gate charge at 20 V gate-source voltage is 124 nC, minimizing switching losses. Robust forward voltage drop of 1.2 V ensures effective conduction. Compact dimensions with height 9.45 mm, length 10.36 mm, and width 4.57 mm.

Designed with 100% avalanche testing for enhanced safety and reliability.

Ideal for industrial power management, automotive electronics, and high-reliability control systems. Browse Infineon products and MOSFETs on EnvMart for extensive semiconductor solutions.