Infineon N-Channel MOSFET, 13 A, 600 V Enhancement Mode, 3-Pin TO-252 Package IPD60R180C7ATMA1

The Infineon IPD60R180C7ATMA1 is a high-performance N-Channel MOSFET designed for industrial and electronic power control applications. It belongs to the IPD50R series and features a robust enhancement mode channel that handles continuous drain currents up to 13 A and a maximum drain-source voltage rating of 600 V. The MOSFET is housed in a compact TO-252 surface mount package with 3 pins, facilitating efficient PCB layouts.

This device is optimized for switching and low conduction losses with a typical gate charge of 24 nC and a maximum drain-source resistance of 180 milliohms. It offers a maximum power dissipation of 68 watts and a forward voltage of 900 mV, making it suitable for power factor correction (PFC), inverter circuits, and high-frequency switching applications.

Infineon's CoolMOS™ C7 superjunction technology significantly reduces turn-off losses compared to earlier generations, improving efficiency and enabling increased switching frequencies. The IPD60R180C7ATMA1 MOSFET supports both hard and soft switching topologies in industrial power supplies, chargers, and motor controllers.

With industry-standard compact dimensions (6.73 mm length, 6.22 mm width, 2.41 mm height), it ensures high power density integration. The operating gate-source voltage of up to 20 V provides protection and reliable gate drive performance. Though not automotive certified, it is ideal for commercial, industrial, laboratory, and manufacturing power electronics solutions.

Supports maximum continuous drain current of 13 A for robust load handling. Capable of withstanding drain-source voltages up to 600 V. Features an enhancement mode channel with a TO-252 surface mount package and 3 pins. Maximum drain-source resistance of 180 milliohms ensuring low conduction losses.

Typical gate charge of 24 nanocoulombs at Vgs for fast switching performance. Provides maximum power dissipation of 68 W suitable for demanding applications. Forward voltage rating is 900 mV allowing efficient conduction.

Maximum gate-source voltage rating of 20 V for gate drive protection. Compact physical dimensions: length 6.73 mm, width 6.22 mm, height 2.41 mm.

This Infineon MOSFET model is suited to demanding electronic components applications including power supply units, industrial machinery, laboratory equipment, and manufacturing power systems. Explore related power transistor solutions and power management components at EnvMart for your technical and commercial procurement needs.