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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPA60R160P7XKSA1 |
| Mount Type | Through Hole |
| Series | IPA60R |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 1.2kV |
| Maximum Drain Source Resistance Rds | 160mΩ |
| Channel Mode | Enhancement |
Infineon IPA60R160P7XKSA1 is a high-quality N-Channel MOSFET semiconductor designed for power electronics applications requiring reliable performance with a maximum continuous drain current of 20 A and maximum drain-source voltage of 1.2 kV. The device features an enhancement mode channel and low drain-source resistance of 160 mΩ, making it highly efficient in switching and conduction tasks.
Encased in a three-pin TO-220 package with through-hole mounting, this MOSFET supports ease of installation on standard PCBs while facilitating thermal management in demanding environments.
It possesses integral characteristics such as a rugged body diode for enduring harsh switching stresses and an integrated gate resistor for optimized switching behavior. The Infineon 7th generation CoolMOS™ technology ensures a balance between low gate charge and minimized conduction losses, contributing to energy-efficient designs.
Electrical and electronic engineers use this MOSFET in industrial power supplies, motor control circuits, and other power management systems requiring high voltage handling capability and robust current conduction.
The device complies with necessary semiconductor standards, though no specific automotive or other specialized standards are applied. It provides an excellent choice for upgrading or designing new power electronic circuits, combining robust electrical performance with a widely accepted package style.
Type N channel configuration designed for high efficiency operation. Maximum continuous drain current of 20 amperes ensures robust performance. Rated for 1.2 kV drain-source voltage for demanding power applications. Low on-resistance of 160 mΩ reduces switching losses effectively.
Enhancement mode channel ensures precise electronic control. Standard through-hole mounting for easy PCB integration. Equipped with a rugged body diode optimized for fast switching. Meets ESD ruggedness requirements with ≥ 2 kV HBM class 2 rating.
Ideal for industrial and power management applications. Packaged in a reliable TO-220 form factor supporting heat dissipation. Explore more industrial-grade semiconductors including Power MOSFETs and discrete components with Infineon and other leading brands at EnvMart.
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