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Infineon CoolMOS N-Channel MOSFET, 650 V, 16 A, Enhancement Mode, 3-Pin TO-220 IPP60R145CFD7XKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 4.57mm
Length 10.36mm
Model IPP60R145CFD7XKSA1
Width 15.95mm
Mount Type Surface
Series CoolMOS
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 16A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 145mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 83W
Typical Gate Charge Qg @ Vgs 31nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Designed for robust power switching applications with low Rds(on) of 145 mΩ.
  • Supports maximum gate-source voltage of 20 V with 1 V forward voltage.
  • High power dissipation capacity of 83 W and operating temperatures from -55°C to 150°C.
  • Pb-free and RoHS compliant with superior thermal resistance and avalanche tested reliability.
  • Home/Electronic Components, Power & Connectors/Semiconductors/Discrete Semiconductors/MOSFETsInfineon CoolMOS N-Channel MOSFET, 16 A, 650 V Enhancement, 3-Pin TO-220 IPP60R145CFD7XKSA1RS Stock No.: 222-4704Brand: InfineonManufacturers Part
  • MOSFETs are transistor devices which are controlled by a capacitor.
  • The "Field-Effect" means that they are controlled by voltage.
  • The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.Pb-free lead plating; RoHS compliantSuperior thermal resistance 100% avalanche testedHalogen-free according to IEC61249-2-23Rea

Product Description

Infineon IPP60R145CFD7XKSA1 is a CoolMOS N-Channel Metal Oxide Semiconductor Field-Effect Transistor designed for efficient power management in electronic circuits. It operates at a maximum continuous drain current of 16 A and withstands a drain-source voltage up to 650 V, making it suitable for high-voltage, high-current switching applications.

The device package is a 3-pin TO-220 intended for surface mounting, featuring a low drain-source resistance of 145 milliohms and typical gate charge of 31 nC at the rated gate voltage of 20 V. Its forward voltage is nominally 1 V, and it can dissipate power up to 83 W, supporting operating temperatures ranging from -55°C to 150°C. These features enable reliable operation in industrial, consumer electronics, and power conversion systems.

It is 100% avalanche tested for durability and superior thermal resistance, ensuring safety and longevity in demanding environments. This component is utilized in power supplies, motor controllers, inverters, and various applications that demand efficient high-speed switching and low power losses.

Robust CoolMOS technology ensures efficient power handling. Enhancement mode operation for controlled switching performance. Compact TO-220 package allows for effective heat dissipation. Wide operating temperature range suitable for industrial applications.

Complies with environmental regulations including RoHS. The Infineon IPP60R145CFD7XKSA1 provides engineers with a reliable choice for power electronics design and integration. Explore the Electronics & Electricals category for more discrete semiconductor components suited to high-performance applications on EnvMart.

Explore more products in our MOSFET category.

Infineon CoolMOS N-Channel MOSFET, 650 V, 16 A, Enhancement Mode, 3-Pin TO-220 IPP60R145CFD7XKSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 16 A.

It can withstand a maximum drain-source voltage of 650 V.

This MOSFET has a power dissipation capacity of 83 W.

The dimensions of the TO-220 package are 10.36 mm in length, 15.95 mm in width, and 4.57 mm in height.

The typical gate charge at the rated gate voltage of 20 V is 31 nC.

It operates within a temperature range of -55°C to 150°C.

The forward voltage is nominally rated at 1 V.

This model features an N-channel configuration.

Yes, it is RoHS compliant and also Pb-free.

The maximum gate-source voltage supported by this device is 20 V.

It is suitable for high-voltage, high-current switching applications, including power supplies and motor controllers.

This model is designed for surface mounting.

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